onsemi NXH350N100H4Q2F2P1G IGBT Module 1000 V Q2PACK, Surface
- RS庫存編號:
- 245-6974
- 製造零件編號:
- NXH350N100H4Q2F2P1G
- 製造商:
- onsemi
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可享批量折扣
小計（1 件）*
TWD5,674.00
(不含稅)
TWD5,957.70
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年7月13日 發貨
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單位 | 每單位 |
|---|---|
| 1 - 1 | TWD5,674.00 |
| 2 + | TWD5,668.00 |
* 參考價格
- RS庫存編號:
- 245-6974
- 製造零件編號:
- NXH350N100H4Q2F2P1G
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | IGBT Module | |
| Maximum Collector Emitter Voltage Vceo | 1000V | |
| Maximum Power Dissipation Pd | 592W | |
| Number of Transistors | 4 | |
| Package Type | Q2PACK | |
| Mount Type | Surface | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Height | 12.3mm | |
| Length | 93.1mm | |
| Width | 47.3 mm | |
| Series | NXH350N100H4Q2F2P1G | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type IGBT Module | ||
Maximum Collector Emitter Voltage Vceo 1000V | ||
Maximum Power Dissipation Pd 592W | ||
Number of Transistors 4 | ||
Package Type Q2PACK | ||
Mount Type Surface | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Height 12.3mm | ||
Length 93.1mm | ||
Width 47.3 mm | ||
Series NXH350N100H4Q2F2P1G | ||
Automotive Standard No | ||
Si/SiC Hybrid Module - EliteSiC, I-Type NPC 1000 V, 350 A IGBT, 1200 V, 100 A SiC Diode, Q2 Package Press-fit pins
The ON Semiconductor Three Level NPC Q2Pack Module is a high density, integrated power module combines high performance IGBTs with rugged anti parallel diodes.
Extremely efficient trench with field stop technology
Low switching loss reduces system power dissipation
Module design offers high power density
Low inductive layout
Low package height
These devices are Pb free, Halogen Free and are RoHS Compliant
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