Infineon IGBT Module, 140 A 1200 V
- RS庫存編號:
- 244-5858
- 製造零件編號:
- FS100R12KE3BOSA1
- 製造商:
- Infineon
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可享批量折扣
查看批量定價選項小計（1 托盤，共 10 件）*
TWD37,425.00
(不含稅)
TWD39,296.20
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 10 件從 2026年6月25日 起裝運發貨
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單位 | 每單位 | 每托盤* |
|---|---|---|
| 10 - 10 | TWD3,742.50 | TWD37,425.00 |
| 20 + | TWD3,667.70 | TWD36,677.00 |
* 參考價格
- RS庫存編號:
- 244-5858
- 製造零件編號:
- FS100R12KE3BOSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Maximum Continuous Collector Current Ic | 140A | |
| Product Type | IGBT Module | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Number of Transistors | 6 | |
| Maximum Power Dissipation Pd | 480W | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.15V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Series | FS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Maximum Continuous Collector Current Ic 140A | ||
Product Type IGBT Module | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Number of Transistors 6 | ||
Maximum Power Dissipation Pd 480W | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.15V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Series FS | ||
Automotive Standard No | ||
The infineon IGBT module the maximum rated collector emitter voltage is 1200 V and toatal power dissipation is 480 W, maximum gate threshold voltage is 6.5 V.
Internal isolation basic insulation (class 1, IEC 61140)
Gate-emitter peak voltage + /- 20 V
Maximum collector-emitter saturation voltage 2.15 V
Gate-emitter leakage current 400 nA