製造零件編號

Infineon FS150R12KT3BOSA1 IGBT Module, 200 A 1200 V

RS庫存編號:: 244-5403
製造零件編號:: FS150R12KT3BOSA1
製造商:: Infineon

Infineon FS150R12KT3BOSA1 IGBT Module, 200 A 1200 V

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RS庫存編號:: 244-5403
製造零件編號:: FS150R12KT3BOSA1
製造商:: Infineon

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選取全部	屬性	值
	品牌	Infineon
	Maximum Continuous Collector Current	200 A
	Maximum Collector Emitter Voltage	1200 V
	Maximum Gate Emitter Voltage	+/-20V
	Number of Transistors	6
	Maximum Power Dissipation	700 W

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	品牌 Infineon
	Maximum Continuous Collector Current 200 A
	Maximum Collector Emitter Voltage 1200 V
	Maximum Gate Emitter Voltage +/-20V
	Number of Transistors 6
	Maximum Power Dissipation 700 W

Datasheet - FS150R12KT3BOSA1

The infineon IGBT module the maximum rated repetitive peak collector current is 300 A and collector-emitter saturation voltag 2.15 V, gate threshold voltage is 6.5 V.

Collector-emitter cut-off current 5.0 mA
Temperature under switching conditions 125° C
Gate-emitter leakage current 400 nA
Reverse transfer capacitance 0.40 nF

Infineon FS150R12KT3BOSA1 IGBT Module, 200 A 1200 V

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.

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