STMicroelectronics STGYA50H120DF2 IGBT 1200 V, 3-Pin

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包裝方式：
RS庫存編號:
244-3195
製造零件編號:
STGYA50H120DF2
製造商:
STMicroelectronics
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品牌

STMicroelectronics

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

1200V

Maximum Power Dissipation Pd

535W

Pin Count

3

Switching Speed

5μs

Maximum Gate Emitter Voltage VGEO

±20 V

Minimum Operating Temperature

-55°C

Maximum Collector Emitter Saturation Voltage VceSAT

2.1V

Maximum Operating Temperature

175°C

Series

H

Standards/Approvals

No

Automotive Standard

No

The STMicroelectronics IGBT developed using an advanced proprietary trench gate field stop structure. This device is part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Moreover, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Maximum junction temperature TJ = 175 °C

5 μs of short-circuit withstand time

Low VCE(sat) = 2.1 V (typ.) @ IC = 50 A

Tight parameter distribution

Positive VCE(sat) temperature coefficient

Low thermal resistance

Very fast recovery antiparallel diode

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