製造零件編號

STMicroelectronics STGYA50H120DF2 Series IGBT, 50 A 1200 V Max247 long leads

RS庫存編號:: 244-3194
製造零件編號:: STGYA50H120DF2
製造商:: STMicroelectronics

STMicroelectronics STGYA50H120DF2 Series IGBT, 50 A 1200 V Max247 long leads

可享批量折扣

小計（1 管，共 30 件）*

TWD7,446.00

(不含稅)

TWD7,818.30

訂單超過 $1,300.00 免費送貨

有庫存

加上 270 件從 2026年3月02日起發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每管*
30 - 30	TWD248.20	TWD7,446.00
60 +	TWD240.70	TWD7,221.00

* 參考價格

RS庫存編號:: 244-3194
製造零件編號:: STGYA50H120DF2
製造商:: STMicroelectronics

規格

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產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	STMicroelectronics
	Maximum Continuous Collector Current	50 A
	Maximum Collector Emitter Voltage	1200 V
	Maximum Gate Emitter Voltage	±20V
	Maximum Power Dissipation	535 W
	Number of Transistors	1
	Configuration	Series
	Package Type	Max247 long leads

	選取全部
	品牌 STMicroelectronics
	Maximum Continuous Collector Current 50 A
	Maximum Collector Emitter Voltage 1200 V
	Maximum Gate Emitter Voltage ±20V
	Maximum Power Dissipation 535 W
	Number of Transistors 1
	Configuration Series
	Package Type Max247 long leads

Datasheet - STGYA50H120DF2ST

The STMicroelectronics IGBT developed using an advanced proprietary trench gate field stop structure. This device is part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Moreover, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Maximum junction temperature TJ = 175 °C
5 μs of short-circuit withstand time
Low VCE(sat) = 2.1 V (typ.) @ IC = 50 A
Tight parameter distribution
Positive VCE(sat) temperature coefficient
Low thermal resistance
Very fast recovery antiparallel diode

STMicroelectronics STGYA50H120DF2 Series IGBT, 50 A 1200 V Max247 long leads

訂單超過 $1,300.00 免費送貨

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.

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