STMicroelectronics IGBT 1200 V, 3-Pin

RS庫存編號:: 244-3194
製造零件編號:: STGYA50H120DF2
製造商:: STMicroelectronics

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小計（1 管，共 30 件）*

TWD8,187.00

(不含稅)

TWD8,596.20

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單位	每單位	每管*
30 - 30	TWD272.90	TWD8,187.00
60 +	TWD264.70	TWD7,941.00

* 參考價格

RS庫存編號:: 244-3194
製造零件編號:: STGYA50H120DF2
製造商:: STMicroelectronics

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產品詳細資訊

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選取全部	屬性	值
	品牌	STMicroelectronics
	Product Type	IGBT
	Maximum Collector Emitter Voltage Vceo	1200V
	Maximum Power Dissipation Pd	535W
	Pin Count	3
	Switching Speed	5μs
	Maximum Collector Emitter Saturation Voltage VceSAT	2.1V
	Maximum Gate Emitter Voltage VGEO	±20 V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Series	H
	Standards/Approvals	No
	Automotive Standard	No

	選取全部
	品牌 STMicroelectronics
	Product Type IGBT
	Maximum Collector Emitter Voltage Vceo 1200V
	Maximum Power Dissipation Pd 535W
	Pin Count 3
	Switching Speed 5μs
	Maximum Collector Emitter Saturation Voltage VceSAT 2.1V
	Maximum Gate Emitter Voltage VGEO ±20 V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Series H
	Standards/Approvals No
	Automotive Standard No

Datasheet - STGYA50H120DF2ST

The STMicroelectronics IGBT developed using an advanced proprietary trench gate field stop structure. This device is part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Moreover, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Maximum junction temperature TJ = 175 °C

5 μs of short-circuit withstand time

Low VCE(sat) = 2.1 V (typ.) @ IC = 50 A

Tight parameter distribution

Positive VCE(sat) temperature coefficient

Low thermal resistance

Very fast recovery antiparallel diode

STMicroelectronics IGBT 1200 V, 3-Pin

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