STMicroelectronics STGYA50M120DF3 Single IGBT, 100 A 1200 V Max247

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包裝方式：
RS庫存編號:
248-4896
製造零件編號:
STGYA50M120DF3
製造商:
STMicroelectronics
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品牌

STMicroelectronics

Maximum Continuous Collector Current

100 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

20V

Number of Transistors

1

Maximum Power Dissipation

535 W

Configuration

Single

Package Type

Max247

The STMicroelectronics product is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low loss and the short circuit functionality is essential. Furthermore, the positive VCEsat temperature coefficient and the tight parameter distribution result in safer paralleling operation.

Maximum junction temperature of 175 degree C
10 μs of short circuit withstand time
Low VCEsat
Tight parameter distribution
Positive VCEsat temperature coefficient
Low thermal resistance
Soft and fast recovery antiparallel diode

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.


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