製造零件編號

Infineon IGB50N65H5ATMA1 IGBT, 80 A 650 V, 3-Pin TO-263

RS庫存編號:: 218-4390
製造零件編號:: IGB50N65H5ATMA1
製造商:: Infineon

Infineon IGB50N65H5ATMA1 IGBT, 80 A 650 V, 3-Pin TO-263

可享批量折扣

小計（1 包，共 5 件）*

TWD506.00

(不含稅)

TWD531.30

訂單超過 $1,300.00 免費送貨

有庫存

加上 2,990 件從 2026年1月26日起發貨

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單位	每單位	每包*
5 - 245	TWD101.20	TWD506.00
250 - 495	TWD98.40	TWD492.00
500 +	TWD92.80	TWD464.00

* 參考價格

RS庫存編號:: 218-4390
製造零件編號:: IGB50N65H5ATMA1
製造商:: Infineon

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產品詳細資訊

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選取全部	屬性	值
	品牌	Infineon
	Maximum Continuous Collector Current	80 A
	Maximum Collector Emitter Voltage	650 V
	Maximum Gate Emitter Voltage	20V
	Number of Transistors	1
	Maximum Power Dissipation	270 W
	Package Type	TO-263
	Channel Type	N
	Pin Count	3

	選取全部
	品牌 Infineon
	Maximum Continuous Collector Current 80 A
	Maximum Collector Emitter Voltage 650 V
	Maximum Gate Emitter Voltage 20V
	Number of Transistors 1
	Maximum Power Dissipation 270 W
	Package Type TO-263
	Channel Type N
	Pin Count 3

Datasheet - IGB50N65H5ATMA1

The Infineon TRENCHSTOP IGBT5 technology redefines best-in-class IGBT resulting in lower junction and case temperature leading to higher device reliability by providing unmatched performance in terms of efficiency for hard switching applications. It has collector emitter voltage of 650 V and collector current of 80 A.

Higher power density design
50V increase in the bus voltage possible without compromising reliability
Mild positive temperature coefficient

Infineon IGB50N65H5ATMA1 IGBT, 80 A 650 V, 3-Pin TO-263

訂單超過 $1,300.00 免費送貨

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