製造零件編號

STMicroelectronics STGB30H65DFB2 IGBT, 50 A 650 V, 3-Pin D2PAK (TO-263)

RS庫存編號:: 204-9867
製造零件編號:: STGB30H65DFB2
製造商:: STMicroelectronics

STMicroelectronics STGB30H65DFB2 IGBT, 50 A 650 V, 3-Pin D2PAK (TO-263)

可享批量折扣

小計（1 卷，共 1000 件）*

TWD50,500.00

(不含稅)

TWD53,020.00

訂單超過 $1,300.00 免費送貨

暫時缺貨

從 2026年6月03日發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每卷*
1000 - 4000	TWD50.50	TWD50,500.00
5000 +	TWD49.50	TWD49,500.00

* 參考價格

RS庫存編號:: 204-9867
製造零件編號:: STGB30H65DFB2
製造商:: STMicroelectronics

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產品詳細資訊

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選取全部	屬性	值
	品牌	STMicroelectronics
	Maximum Continuous Collector Current	50 A
	Maximum Collector Emitter Voltage	650 V
	Maximum Gate Emitter Voltage	±20V
	Number of Transistors	1
	Maximum Power Dissipation	167 W
	Package Type	D2PAK (TO-263)
	Pin Count	3

	選取全部
	品牌 STMicroelectronics
	Maximum Continuous Collector Current 50 A
	Maximum Collector Emitter Voltage 650 V
	Maximum Gate Emitter Voltage ±20V
	Number of Transistors 1
	Maximum Power Dissipation 167 W
	Package Type D2PAK (TO-263)
	Pin Count 3

Datasheet - STGB30H65DFB2

COO (Country of Origin):: CN

The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.

Maximum junction temperature : TJ = 175 °C
Low VCE(sat) = 1.65 V (typ.) @ IC = 30 A
Very fast and soft recovery co-packaged diode
Minimized tail current
Tight parameter distribution

STMicroelectronics STGB30H65DFB2 IGBT, 50 A 650 V, 3-Pin D2PAK (TO-263)

訂單超過 $1,300.00 免費送貨

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.

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