製造零件編號

STMicroelectronics STGWA30H65DFB2 IGBT, 50 A 650 V, 3-Pin TO-247

RS庫存編號:: 204-9877
製造零件編號:: STGWA30H65DFB2
製造商:: STMicroelectronics

STMicroelectronics STGWA30H65DFB2 IGBT, 50 A 650 V, 3-Pin TO-247

可享批量折扣

小計（1 管，共 30 件）*

TWD2,289.00

(不含稅)

TWD2,403.60

訂單超過 $1,300.00 免費送貨

有庫存

加上 630 件從 2026年1月26日起發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每管*
30 - 30	TWD76.30	TWD2,289.00
60 - 90	TWD74.80	TWD2,244.00
120 +	TWD73.30	TWD2,199.00

* 參考價格

RS庫存編號:: 204-9877
製造零件編號:: STGWA30H65DFB2
製造商:: STMicroelectronics

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選取全部	屬性	值
	品牌	STMicroelectronics
	Maximum Continuous Collector Current	50 A
	Maximum Collector Emitter Voltage	650 V
	Maximum Gate Emitter Voltage	±20V
	Number of Transistors	1
	Maximum Power Dissipation	167 W
	Package Type	TO-247
	Pin Count	3

	選取全部
	品牌 STMicroelectronics
	Maximum Continuous Collector Current 50 A
	Maximum Collector Emitter Voltage 650 V
	Maximum Gate Emitter Voltage ±20V
	Number of Transistors 1
	Maximum Power Dissipation 167 W
	Package Type TO-247
	Pin Count 3

Datasheet - STGWA30H65DFB2

COO (Country of Origin):: CN

The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.

Maximum junction temperature : TJ = 175 °C
Low VCE(sat) = 1.65 V (typ.) @ IC = 30 A
Very fast and soft recovery co-packaged diode
Minimized tail current
Tight parameter distribution
Low thermal resistance

STMicroelectronics STGWA30H65DFB2 IGBT, 50 A 650 V, 3-Pin TO-247

訂單超過 $1,300.00 免費送貨

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.

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