Infineon FF1500R12IE5BPSA1, Type N-Channel IGBT, 1500 A 1.2 kV, 10-Pin PRIME3, Surface
- RS庫存編號:
- 218-4323
- 製造零件編號:
- FF1500R12IE5BPSA1
- 製造商:
- Infineon
可享批量折扣
小計(1 件)*
TWD22,372.00
(不含稅)
TWD23,490.60
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年6月23日 發貨
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單位 | 每單位 |
|---|---|
| 1 - 4 | TWD22,372.00 |
| 5 + | TWD21,925.00 |
* 參考價格
- RS庫存編號:
- 218-4323
- 製造零件編號:
- FF1500R12IE5BPSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 1500A | |
| Maximum Collector Emitter Voltage Vceo | 1.2kV | |
| Number of Transistors | 2 | |
| Maximum Power Dissipation Pd | 20mW | |
| Package Type | PRIME3 | |
| Mount Type | Surface | |
| Channel Type | Type N | |
| Pin Count | 10 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.6V | |
| Maximum Operating Temperature | 175°C | |
| Height | 38.25mm | |
| Length | 247mm | |
| Width | 86 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 1500A | ||
Maximum Collector Emitter Voltage Vceo 1.2kV | ||
Number of Transistors 2 | ||
Maximum Power Dissipation Pd 20mW | ||
Package Type PRIME3 | ||
Mount Type Surface | ||
Channel Type Type N | ||
Pin Count 10 | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.6V | ||
Maximum Operating Temperature 175°C | ||
Height 38.25mm | ||
Length 247mm | ||
Width 86 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon PrimePack dual IGBT module with TRENCHSTOP IGBT5 and .XT interconnection technology. It has collector emitter voltage of 1200 V. The N-Channel TRENCHSTOP and field stop IGBT Modules are suitable for hard switching and soft switching applications such as high power converters, UPS system, motor drives and solar applications.
Copper bonds for high current carrying capabilities
Sintering of chips for highest power cycling capabilities
Total losses reduced by up to 20%
Less cooling effort for same output power
Enables higher system overload conditions
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