Infineon, Type N-Channel IGBT Module, 1400 A 1200 V AG-PRIME3-1, Clamp
- RS庫存編號:
- 166-0887
- 製造零件編號:
- FF1400R12IP4BOSA1
- 製造商:
- Infineon
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可享批量折扣
查看批量定價選項小計（1 托盤，共 2 件）*
TWD44,581.00
(不含稅)
TWD46,810.04
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2028年7月11日 發貨
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單位 | 每單位 | 每托盤* |
|---|---|---|
| 2 - 8 | TWD22,290.50 | TWD44,581.00 |
| 10 + | TWD21,845.00 | TWD43,690.00 |
* 參考價格
- RS庫存編號:
- 166-0887
- 製造零件編號:
- FF1400R12IP4BOSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Maximum Continuous Collector Current Ic | 1400A | |
| Product Type | IGBT Module | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 7.65kW | |
| Package Type | AG-PRIME3-1 | |
| Mount Type | Clamp | |
| Channel Type | Type N | |
| Switching Speed | 0.97μs | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.15V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | EN 61140 | |
| Length | 250mm | |
| Height | 38mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Maximum Continuous Collector Current Ic 1400A | ||
Product Type IGBT Module | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 7.65kW | ||
Package Type AG-PRIME3-1 | ||
Mount Type Clamp | ||
Channel Type Type N | ||
Switching Speed 0.97μs | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.15V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals EN 61140 | ||
Length 250mm | ||
Height 38mm | ||
Automotive Standard No | ||
不適用
- COO (Country of Origin):
- MY
Infineon IGBT Module, 1200V Max Collector Emitter Voltage, 1400A Max Continuous Collector Current - FF1400R12IP4BOSA1
This IGBT module provides high-power switching for demanding industrial converters and traction inverters. Engineered to operate across a broad temperature span, it delivers robust performance in high-current environments while using a clamp mount for secure installation. The package and electrical characteristics support heavy-duty power semiconductor roles in systems requiring controlled switching at elevated voltages and currents.
Features and Benefits:
• 1200V voltage rating enables high-voltage system integration
• 1400A continuous current supports heavy-duty power flows
• 2.15V low saturation voltage reduces conduction losses
• 7.65kW maximum dissipation handles intensive thermal loads
• 0.97μs switching speed permits fast power conversion
• 20V gate-emitter limit ensures safe gate‑drive margins
• 1400A continuous current supports heavy-duty power flows
• 2.15V low saturation voltage reduces conduction losses
• 7.65kW maximum dissipation handles intensive thermal loads
• 0.97μs switching speed permits fast power conversion
• 20V gate-emitter limit ensures safe gate‑drive margins
Applications
• Suitable for traction inverter power stages in rail systems
• Ideal for industrial motor drives with high current demand
• Used with DC-DC converters in large-scale energy storage
• Can be used for utility-scale power conversion modules
• Appropriate for heavy‑duty welding power supplies
• Ideal for industrial motor drives with high current demand
• Used with DC-DC converters in large-scale energy storage
• Can be used for utility-scale power conversion modules
• Appropriate for heavy‑duty welding power supplies
What mounting arrangement does it require for installation?
It is designed for clamp‑style mounting to provide a secure mechanical and thermal interface.
How wide is the operational temperature range for demanding environments?
It operates from -40°C up to 150°C, allowing use in extreme ambient and enclosure conditions.
What package form factor does the device use for integration?
It comes in an AG‑PRIME3‑1 package suitable for high‑power module layouts.
How does the device’s gate rating affect gate‑drive design?
The gate-emitter limit is 20V, so gate‑drive circuits must restrict applied voltage accordingly to prevent gate damage.
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