Infineon FF1200R12IE5PBPSA1, Type N-Channel Inverter, 1200 A 1200 V, 10-Pin PRIME2, Surface
- RS庫存編號:
- 218-4321
- 製造零件編號:
- FF1200R12IE5PBPSA1
- 製造商:
- Infineon
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TWD24,753.00
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TWD25,990.65
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|---|---|
| 1 - 4 | TWD24,753.00 |
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* 參考價格
- RS庫存編號:
- 218-4321
- 製造零件編號:
- FF1200R12IE5PBPSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Maximum Continuous Collector Current Ic | 1200A | |
| Product Type | Inverter | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 20mW | |
| Number of Transistors | 2 | |
| Package Type | PRIME2 | |
| Mount Type | Surface | |
| Channel Type | Type N | |
| Pin Count | 10 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.15V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Series | FF1200R12IE5P | |
| Height | 22mm | |
| Length | 172mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Maximum Continuous Collector Current Ic 1200A | ||
Product Type Inverter | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 20mW | ||
Number of Transistors 2 | ||
Package Type PRIME2 | ||
Mount Type Surface | ||
Channel Type Type N | ||
Pin Count 10 | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.15V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Series FF1200R12IE5P | ||
Height 22mm | ||
Length 172mm | ||
Automotive Standard No | ||
The Infineon PrimePack dual IGBT module with TRENCHSTOP IGBT5 and .XT interconnection technology. It has collector emitter voltage of 1200 V. The N-Channel TRENCHSTOP and field stop IGBT Modules are suitable for hard switching and soft switching applications such as high power converters, UPS system, motor drives and solar applications.
Copper bonds for high current carrying capabilities
Sintering of chips for highest power cycling capabilities
Total losses reduced by up to 20%
Less cooling effort for same output power
Enables higher system overload conditions
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