Infineon IGW30N65L5XKSA1, N-Channel IGBT, 85 A 650 V, 3-Pin TO-247, Through Hole
- RS庫存編號:
- 215-6634
- 製造零件編號:
- IGW30N65L5XKSA1
- 製造商:
- Infineon
可享批量折扣
查看批量定價選項小計（1 包，共 5 件）*
TWD960.00
(不含稅)
TWD1,008.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 185 件從 2026年9月14日 起發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 5 | TWD192.00 | TWD960.00 |
| 10 - 95 | TWD187.20 | TWD936.00 |
| 100 - 245 | TWD182.40 | TWD912.00 |
| 250 - 495 | TWD177.60 | TWD888.00 |
| 500 + | TWD165.20 | TWD826.00 |
* 參考價格
- RS庫存編號:
- 215-6634
- 製造零件編號:
- IGW30N65L5XKSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Maximum Continuous Collector Current Ic | 85A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 227W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Maximum Gate Emitter Voltage VGEO | ±30 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.5V | |
| Maximum Operating Temperature | 175°C | |
| Series | LowVCE(sat) Fifth Generation | |
| Standards/Approvals | Pb-free lead plating, RoHS, JEDEC | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Maximum Continuous Collector Current Ic 85A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 227W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Maximum Gate Emitter Voltage VGEO ±30 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.5V | ||
Maximum Operating Temperature 175°C | ||
Series LowVCE(sat) Fifth Generation | ||
Standards/Approvals Pb-free lead plating, RoHS, JEDEC | ||
Automotive Standard No | ||
The Infineon fifth generation insulated-gate bipolar transistor with low saturation voltage.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference