Infineon, Type N-Channel IGBT, 40 A 650 V, 3-Pin TO-247, Through Hole
- RS庫存編號:
- 232-6733
- 製造零件編號:
- IKWH20N65WR6XKSA1
- 製造商:
- Infineon
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- RS庫存編號:
- 232-6733
- 製造零件編號:
- IKWH20N65WR6XKSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Maximum Continuous Collector Current Ic | 40A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Number of Transistors | 1 | |
| Maximum Power Dissipation Pd | 140W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.6V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 5.21mm | |
| Length | 21.1mm | |
| Standards/Approvals | JEDEC47/20/22 | |
| Series | IKWH20N65WR6 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Maximum Continuous Collector Current Ic 40A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Number of Transistors 1 | ||
Maximum Power Dissipation Pd 140W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.6V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Height 5.21mm | ||
Length 21.1mm | ||
Standards/Approvals JEDEC47/20/22 | ||
Series IKWH20N65WR6 | ||
Automotive Standard No | ||
The Infineon's 20 A reverse conducting TRENCHSTOP 5 WR6 IGBT comes in high creep age and clearance TO-247-3-HCC package. It is specifically optimized for PFC for RAC / CAC and Welding inverter application. Excellent price/performance ratio of WR6 IGBT allows access to the high performance technology also for cost sensitive customers. WR6 is offering lowest VCEsat, and Esw which allows the switching frequency up to 75 kHz. WR6 IGBT also enable more reliable design with the increased clearances and creep age distances.
Monolithically integrated diode
Lowest switching losses
Improved reliability against package contamination
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