Infineon IKZ50N65EH5XKSA1 IGBT, 85 A 650 V, 4-Pin PG-TO247-4
- RS庫存編號:
- 215-6676
- 製造零件編號:
- IKZ50N65EH5XKSA1
- 製造商:
- Infineon
可享批量折扣
小計(1 管,共 30 件)*
TWD3,117.00
(不含稅)
TWD3,273.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 210 件準備從其他地點送貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 30 - 60 | TWD103.90 | TWD3,117.00 |
| 90 - 120 | TWD101.80 | TWD3,054.00 |
| 150 + | TWD99.80 | TWD2,994.00 |
* 參考價格
- RS庫存編號:
- 215-6676
- 製造零件編號:
- IKZ50N65EH5XKSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Maximum Continuous Collector Current | 85 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | ±20 V, ±30 V | |
| Maximum Power Dissipation | 273 W | |
| Package Type | PG-TO247-4 | |
| Pin Count | 4 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Maximum Continuous Collector Current 85 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±20 V, ±30 V | ||
Maximum Power Dissipation 273 W | ||
Package Type PG-TO247-4 | ||
Pin Count 4 | ||
The Infineon 650v duopack insulated-gate bipolar transistor and diode copacked with rapid 1 fast and soft antiparallel diode.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
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