Infineon AIKW40N65DF5XKSA1, Type N-Channel IGBT, 74 A 650 V, 3-Pin TO-247, Through Hole
- RS庫存編號:
- 215-6618
- 製造零件編號:
- AIKW40N65DF5XKSA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 2 件）*
TWD319.00
(不含稅)
TWD334.96
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 156 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 8 | TWD159.50 | TWD319.00 |
| 10 - 98 | TWD155.00 | TWD310.00 |
| 100 - 248 | TWD151.50 | TWD303.00 |
| 250 - 498 | TWD148.00 | TWD296.00 |
| 500 + | TWD136.50 | TWD273.00 |
* 參考價格
- RS庫存編號:
- 215-6618
- 製造零件編號:
- AIKW40N65DF5XKSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 74A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 250W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Gate Emitter Voltage VGEO | ±30 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.6V | |
| Maximum Operating Temperature | 175°C | |
| Series | TrenchStop | |
| Standards/Approvals | AEC-Q101 | |
| Height | 5.21mm | |
| Length | 42mm | |
| Width | 16.13 mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 74A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 250W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Gate Emitter Voltage VGEO ±30 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.6V | ||
Maximum Operating Temperature 175°C | ||
Series TrenchStop | ||
Standards/Approvals AEC-Q101 | ||
Height 5.21mm | ||
Length 42mm | ||
Width 16.13 mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon high speed F5 technology insulated-gate bipolar transistor offering best-in-class efficiency in hard switching and resonant topologies.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
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