onsemi FGH40T120SQDNL4, Type P-Channel IGBT, 40 A 1200 V, 4-Pin TO-247, Through Hole

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onsemi, Type P-Channel IGBT, 40 A 1200 V, 4-Pin TO-247, Through Hole
RS庫存編號
178-4321

毎管：30 個

TWD188.10

(不含稅)

TWD197.50

(含稅)

RS庫存編號:
178-4594
製造零件編號:
FGH40T120SQDNL4
製造商:
onsemi
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品牌

onsemi

Maximum Continuous Collector Current Ic

40A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

1200V

Maximum Power Dissipation Pd

227W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type P

Pin Count

4

Maximum Gate Emitter Voltage VGEO

±30 V

Minimum Operating Temperature

-55°C

Maximum Collector Emitter Saturation Voltage VceSAT

1.78V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Series

Field Stop

Automotive Standard

No

COO (Country of Origin):
CN
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.

Extremely Efficient Trench with Field Stop Technology • TJmax = 175°C • Soft Fast Reverse Recovery Diode • Optimized for High Speed Switching • These are Pb−Free Devices

Applications

Solar inverter UPS Welding

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