onsemi, Type P-Channel IGBT, 75 A 650 V, 4-Pin TO-247, Through Hole

RS庫存編號:: 181-1864
製造零件編號:: FGH75T65SQDNL4
製造商:: onsemi

onsemi, Type P-Channel IGBT, 75 A 650 V, 4-Pin TO-247, Through Hole

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 管，共 450 件）*

TWD86,175.00

(不含稅)

TWD90,486.00

庫存資訊目前無法存取 - 請稍後再回來查看

單位	每單位	每管*
450 - 450	TWD191.50	TWD86,175.00
900 - 4050	TWD187.30	TWD84,285.00
4500 +	TWD183.50	TWD82,575.00

* 參考價格

RS庫存編號:: 181-1864
製造零件編號:: FGH75T65SQDNL4
製造商:: onsemi

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產品詳細資訊

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選取全部	屬性	值
	品牌	onsemi
	Product Type	IGBT
	Maximum Continuous Collector Current Ic	75A
	Maximum Collector Emitter Voltage Vceo	650V
	Maximum Power Dissipation Pd	375W
	Package Type	TO-247
	Mount Type	Through Hole
	Channel Type	Type P
	Pin Count	4
	Switching Speed	1MHz
	Maximum Collector Emitter Saturation Voltage VceSAT	1.43V
	Maximum Gate Emitter Voltage VGEO	20 V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Standards/Approvals	Pb-Free, Halide Free
	Series	Field Stop IV
	Automotive Standard	No
	Energy Rating	160mJ

	選取全部
	品牌 onsemi
	Product Type IGBT
	Maximum Continuous Collector Current Ic 75A
	Maximum Collector Emitter Voltage Vceo 650V
	Maximum Power Dissipation Pd 375W
	Package Type TO-247
	Mount Type Through Hole
	Channel Type Type P
	Pin Count 4
	Switching Speed 1MHz
	Maximum Collector Emitter Saturation Voltage VceSAT 1.43V
	Maximum Gate Emitter Voltage VGEO 20 V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Standards/Approvals Pb-Free, Halide Free
	Series Field Stop IV
	Automotive Standard No
	Energy Rating 160mJ

Datasheet

COO (Country of Origin):: CN

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop IV Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. In addition, this new device is packaged in a TO−247−4L package that provides significant reduction in Eon Losses compared to standard TO−247−3L package. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.

Extremely Efficient Trench with Field Stop Technology

TJmax = 175°C

Improved Gate Control Lowers Switching Losses

Separate Emitter Drive Pin

TO-247-4L for Minimal Eon Losses

Optimized for High Speed Switching

These are Pb-Free Devices

Solar Inverter

Uninterruptible Power Inverter Supplies

Neutral Point Clamp Topology

onsemi, Type P-Channel IGBT, 75 A 650 V, 4-Pin TO-247, Through Hole

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