onsemi FGH75T65SHDTL4, Type P-Channel IGBT, 75 A 650 V, 4-Pin TO-247, Through Hole
- RS庫存編號:
- 181-1889
- 製造零件編號:
- FGH75T65SHDTL4
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 件）*
TWD239.00
(不含稅)
TWD250.95
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 418 個，準備發貨
單位 | 每單位 |
|---|---|
| 1 - 112 | TWD239.00 |
| 113 - 224 | TWD234.00 |
| 225 + | TWD229.00 |
* 參考價格
- RS庫存編號:
- 181-1889
- 製造零件編號:
- FGH75T65SHDTL4
- 製造商:
- onsemi
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Maximum Continuous Collector Current Ic | 75A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 455W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type P | |
| Pin Count | 4 | |
| Switching Speed | 1MHz | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.6V | |
| Maximum Operating Temperature | 175°C | |
| Series | Field Stop 3rd generation | |
| Standards/Approvals | RoHS | |
| Energy Rating | 160mJ | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Maximum Continuous Collector Current Ic 75A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 455W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type P | ||
Pin Count 4 | ||
Switching Speed 1MHz | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.6V | ||
Maximum Operating Temperature 175°C | ||
Series Field Stop 3rd generation | ||
Standards/Approvals RoHS | ||
Energy Rating 160mJ | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Using novel field stop IGBT technology, Fairchild’s new series of field stop 3rd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.
Maximum Junction Temperature: TJ =175°C
Positive Temperature Co-efficient for Easy Parallel Operating
High Current Capability
Low Saturation Voltage: VCE (sat) =1.6 V (Typ.) @ IC = 75 A
100% of the Parts Tested for ILM(1)
High Input Impedance
Fast Switching
Tighten Parameter Distribution
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