onsemi FGH75T65SHDTL4 IGBT, 150 A 650 V, 4-Pin TO-247, Through Hole
- RS庫存編號:
- 181-1889
- 製造零件編號:
- FGH75T65SHDTL4
- 製造商:
- onsemi
可享批量折扣
小計(1 件)*
TWD239.00
(不含稅)
TWD250.95
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 418 個,準備發貨
單位 | 每單位 |
|---|---|
| 1 - 112 | TWD239.00 |
| 113 - 224 | TWD234.00 |
| 225 + | TWD229.00 |
* 參考價格
- RS庫存編號:
- 181-1889
- 製造零件編號:
- FGH75T65SHDTL4
- 製造商:
- onsemi
規格
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Maximum Continuous Collector Current | 150 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 455 W | |
| Number of Transistors | 1 | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Pin Count | 4 | |
| Switching Speed | 1MHz | |
| Transistor Configuration | Single | |
| Dimensions | 15.8 x 5.2 x 22.74mm | |
| Minimum Operating Temperature | -55 °C | |
| Gate Capacitance | 3710pF | |
| Energy Rating | 160mJ | |
| Maximum Operating Temperature | +175 °C | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Maximum Continuous Collector Current 150 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 455 W | ||
Number of Transistors 1 | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Pin Count 4 | ||
Switching Speed 1MHz | ||
Transistor Configuration Single | ||
Dimensions 15.8 x 5.2 x 22.74mm | ||
Minimum Operating Temperature -55 °C | ||
Gate Capacitance 3710pF | ||
Energy Rating 160mJ | ||
Maximum Operating Temperature +175 °C | ||
- COO (Country of Origin):
- CN
Using novel field stop IGBT technology, Fairchilds new series of field stop 3rd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.
Maximum Junction Temperature: TJ =175°C
Positive Temperature Co-efficient for Easy Parallel Operating
High Current Capability
Low Saturation Voltage: VCE (sat) =1.6 V (Typ.) @ IC = 75 A
100% of the Parts Tested for ILM(1)
High Input Impedance
Fast Switching
Tighten Parameter Distribution
Positive Temperature Co-efficient for Easy Parallel Operating
High Current Capability
Low Saturation Voltage: VCE (sat) =1.6 V (Typ.) @ IC = 75 A
100% of the Parts Tested for ILM(1)
High Input Impedance
Fast Switching
Tighten Parameter Distribution
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
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