onsemi FGH60T65SQD-F155, P-Channel IGBT, 60 A 650 V, 3-Pin TO-247 G03, Through Hole

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TWD3,384.00

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TWD3,553.20

(含稅)

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30 - 30TWD112.80TWD3,384.00
60 - 270TWD110.40TWD3,312.00
300 +TWD108.20TWD3,246.00

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RS庫存編號:
178-4259
製造零件編號:
FGH60T65SQD-F155
製造商:
onsemi
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onsemi

Maximum Continuous Collector Current

60 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±30V

Number of Transistors

1

Maximum Power Dissipation

333 W

Package Type

TO-247 G03

Mounting Type

Through Hole

Channel Type

P

Pin Count

3

Transistor Configuration

Single

Dimensions

15.87 x 4.82 x 20.82mm

Maximum Operating Temperature

+175 °C

Energy Rating

50mJ

Minimum Operating Temperature

-55 °C

Gate Capacitance

3813pF

COO (Country of Origin):
CN
Using novel field stop IGBT technology, ON semiconductor’s new series of field stop 4th generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.

Maximum Junction Temperature: TJ =175°C
Positive Temperature Co-efficient for Easy Parallel Operating
High Current Capability
Low Saturation Voltage: VCE(sat) =1.6 V(Typ.) @ IC = 60 A
High Input Impedance
Fast Switching
Tighten Parameter Distribution
Applications
Solar Inverter, UPS, Welder, Telecom, ESS, PFC

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.


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