Infineon IKQ75N120CT2XKSA1, P-Channel IGBT, 150 A 1200 V, 3-Pin TO-247, Through Hole

RS庫存編號:: 162-3285
製造零件編號:: IKQ75N120CT2XKSA1
製造商:: Infineon

Infineon IKQ75N120CT2XKSA1, P-Channel IGBT, 150 A 1200 V, 3-Pin TO-247, Through Hole

可享批量折扣

小計（1 管，共 30 件）*

TWD8,415.00

(不含稅)

TWD8,835.60

訂單超過 $1,300.00 免費送貨

暫時缺貨

從 2026年6月09日發貨

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單位	每單位	每管*
30 - 30	TWD280.50	TWD8,415.00
60 - 90	TWD274.90	TWD8,247.00
120 +	TWD269.40	TWD8,082.00

* 參考價格

RS庫存編號:: 162-3285
製造零件編號:: IKQ75N120CT2XKSA1
製造商:: Infineon

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選取全部	屬性	值
	品牌	Infineon
	Maximum Continuous Collector Current	150 A
	Maximum Collector Emitter Voltage	1200 V
	Maximum Gate Emitter Voltage	±20V
	Number of Transistors	1
	Maximum Power Dissipation	938 W
	Package Type	TO-247
	Mounting Type	Through Hole
	Channel Type	P
	Pin Count	3
	Switching Speed	20kHz
	Transistor Configuration	Single
	Dimensions	15.9 x 5.1 x 21.1mm
	Gate Capacitance	4856pF
	Maximum Operating Temperature	+175 °C
	Energy Rating	10.8mJ
	Minimum Operating Temperature	-40 °C

	選取全部
	品牌 Infineon
	Maximum Continuous Collector Current 150 A
	Maximum Collector Emitter Voltage 1200 V
	Maximum Gate Emitter Voltage ±20V
	Number of Transistors 1
	Maximum Power Dissipation 938 W
	Package Type TO-247
	Mounting Type Through Hole
	Channel Type P
	Pin Count 3
	Switching Speed 20kHz
	Transistor Configuration Single
	Dimensions 15.9 x 5.1 x 21.1mm
	Gate Capacitance 4856pF
	Maximum Operating Temperature +175 °C
	Energy Rating 10.8mJ
	Minimum Operating Temperature -40 °C

Responding to the market requirement to accommodate ever increasing amounts of silicon in smaller, space saving packages, Infineon introduces the new package TO-247PLUS for 1200V IGBT. Higher current capability, improved thermal behaviour. The TO-247PLUS has the same outer dimensions as the industry standard TO-247, but due to the absence of the screw hole, allows up to 75A in 1200V co-packed with full rated 75A diode.

High power density – up to 75 A 1200 V IGBT co-packed with 75 A diode in TO-247 footprint
20% lower R th(jh) compared to TO-247 3 pin
Extended collector-emitter pin creepage of 4.25 mm
Extended clip creepage due to fully encapsulated front side of the package
Higher system power density – I c increase keeping the same system thermal performance
Lower thermal resistance R th(jh) and improved by ∼15% heat dissipation capability of TO-247PLUS vs TO-247
Higher reliability, extended lifetime of the device

Infineon IKQ75N120CT2XKSA1, P-Channel IGBT, 150 A 1200 V, 3-Pin TO-247, Through Hole

訂單超過 $1,300.00 免費送貨

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