IXYS MIXA225PF1200TSF Dual IGBT Module, 360 A 1200 V, 11-Pin SimBus F, PCB Mount

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TWD12,645.00

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TWD13,277.25

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RS庫存編號:
168-4565
製造零件編號:
MIXA225PF1200TSF
製造商:
IXYS
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品牌

IXYS

Maximum Continuous Collector Current

360 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±30V

Maximum Power Dissipation

1100 W

Configuration

Dual

Package Type

SimBus F

Mounting Type

PCB Mount

Channel Type

N

Pin Count

11

Transistor Configuration

Series

Dimensions

152 x 62 x 17mm

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+150 °C

COO (Country of Origin):
DE

IGBT Modules, IXYS


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IGBT Discretes & Modules, IXYS


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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