IXYS MIXA225PF1200TSF, Type N-Channel IGBT Module, 360 A 1200 V, 11-Pin SimBus F, PCB
- RS庫存編號:
- 124-0710
- 製造零件編號:
- MIXA225PF1200TSF
- 製造商:
- IXYS
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小計（1 件）*
TWD4,214.00
(不含稅)
TWD4,424.70
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年3月27日 發貨
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單位 | 每單位 |
|---|---|
| 1 + | TWD4,214.00 |
* 參考價格
- RS庫存編號:
- 124-0710
- 製造零件編號:
- MIXA225PF1200TSF
- 製造商:
- IXYS
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | IXYS | |
| Product Type | IGBT Module | |
| Maximum Continuous Collector Current Ic | 360A | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 1100W | |
| Number of Transistors | 2 | |
| Package Type | SimBus F | |
| Mount Type | PCB | |
| Channel Type | Type N | |
| Pin Count | 11 | |
| Minimum Operating Temperature | 150°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.8V | |
| Maximum Gate Emitter Voltage VGEO | ±30 V | |
| Maximum Operating Temperature | -40°C | |
| Height | 17mm | |
| Series | MIXA225PF1200TSF | |
| Width | 62 mm | |
| Length | 152mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 IXYS | ||
Product Type IGBT Module | ||
Maximum Continuous Collector Current Ic 360A | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 1100W | ||
Number of Transistors 2 | ||
Package Type SimBus F | ||
Mount Type PCB | ||
Channel Type Type N | ||
Pin Count 11 | ||
Minimum Operating Temperature 150°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.8V | ||
Maximum Gate Emitter Voltage VGEO ±30 V | ||
Maximum Operating Temperature -40°C | ||
Height 17mm | ||
Series MIXA225PF1200TSF | ||
Width 62 mm | ||
Length 152mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
IGBT Modules, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.