IXYS MIXA450PF1200TSF Dual IGBT Module, 650 A 1200 V, 11-Pin SimBus F, PCB Mount

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小計（1 盒，共 3 件）*

TWD19,397.10

(不含稅)

TWD20,366.94

(含稅)

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3 - 3TWD6,465.70TWD19,397.10
6 +TWD6,271.70TWD18,815.10

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RS庫存編號:
146-1703
製造零件編號:
MIXA450PF1200TSF
製造商:
IXYS
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品牌

IXYS

Maximum Continuous Collector Current

650 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±30V

Maximum Power Dissipation

2.1 kW

Package Type

SimBus F

Configuration

Dual

Mounting Type

PCB Mount

Channel Type

N

Pin Count

11

Transistor Configuration

Series

Dimensions

152 x 62 x 17mm

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+150 °C

COO (Country of Origin):
DE

IGBT Modules, IXYS


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IGBT Discretes & Modules, IXYS


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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