IXYS, Type N-Channel XPT IGBT Module, 450 A 1200 V, 11-Pin SimBus F, PCB
- RS庫存編號:
- 146-1703
- 製造零件編號:
- MIXA450PF1200TSF
- 製造商:
- IXYS
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- RS庫存編號:
- 146-1703
- 製造零件編號:
- MIXA450PF1200TSF
- 製造商:
- IXYS
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | IXYS | |
| Maximum Continuous Collector Current Ic | 450A | |
| Product Type | XPT IGBT Module | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 2100W | |
| Number of Transistors | 2 | |
| Package Type | SimBus F | |
| Mount Type | PCB | |
| Channel Type | Type N | |
| Pin Count | 11 | |
| Switching Speed | 85ns | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.8V | |
| Maximum Operating Temperature | 150°C | |
| Series | MIXA450PF1200TSF | |
| Length | 152mm | |
| Standards/Approvals | IEC 60747, RoHS | |
| Height | 17mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 IXYS | ||
Maximum Continuous Collector Current Ic 450A | ||
Product Type XPT IGBT Module | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 2100W | ||
Number of Transistors 2 | ||
Package Type SimBus F | ||
Mount Type PCB | ||
Channel Type Type N | ||
Pin Count 11 | ||
Switching Speed 85ns | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.8V | ||
Maximum Operating Temperature 150°C | ||
Series MIXA450PF1200TSF | ||
Length 152mm | ||
Standards/Approvals IEC 60747, RoHS | ||
Height 17mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- DE
IGBT Modules, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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