Infineon FF300R12KT4HOSA1 IGBT Module, 450 A 1200 V
- RS庫存編號:
- 244-5822
- 製造零件編號:
- FF300R12KT4HOSA1
- 製造商:
- Infineon
可享批量折扣
小計(1 托盤,共 10 件)*
TWD35,123.00
(不含稅)
TWD36,879.20
(含稅)
庫存資訊目前無法存取 - 請稍後再回來查看
單位 | 每單位 | 每托盤* |
|---|---|---|
| 10 - 10 | TWD3,512.30 | TWD35,123.00 |
| 20 + | TWD3,442.00 | TWD34,420.00 |
* 參考價格
- RS庫存編號:
- 244-5822
- 製造零件編號:
- FF300R12KT4HOSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Maximum Continuous Collector Current | 450 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Number of Transistors | 2 | |
| Maximum Power Dissipation | 1.6 kW | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Maximum Continuous Collector Current 450 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Number of Transistors 2 | ||
Maximum Power Dissipation 1.6 kW | ||
The infineon IGBT module the maximum rated collector emitter voltage is 1200 V and toatal power dissipation is 1600 W, maximum gate threshold voltage is 6.4 V.
Internal isolation basic insulation (class 1, IEC 61140)
Gate-emitter peak voltage + /- 20 V
Collector-emitter saturation voltage 2.15 V
Gate-emitter leakage current 400 nA
Gate-emitter peak voltage + /- 20 V
Collector-emitter saturation voltage 2.15 V
Gate-emitter leakage current 400 nA
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
相關連結
- Infineon FF300R12KT4HOSA1 IGBT Module, 450 A 1200 V
- Infineon IFF450B12ME4PB11BPSA1 Dual IGBT Module, 450 A 1200 V ECONOD
- Infineon FF450R12ME7B11BPSA1 Dual IGBT Module Chassis Mount
- Infineon FF450R12ME4EB11BPSA1 Common Emitter IGBT Module 13-Pin ECONODUAL
- Infineon FF300R12ME4B11BPSA1 Series IGBT Module 11-Pin ECONOD, PCB Mount
- Infineon FS100R12W2T7B11BOMA1 IGBT Module, 100 A 1200 V Module
- Infineon FP50R12KE3BOSA1 IGBT Module, 75 A 1200 V
- Infineon FS150R12KT4B11BOSA1 IGBT Module, 150 A 1200 V
