Infineon IGBT Module, 450 A 1200 V
- RS庫存編號:
- 244-5822
- 製造零件編號:
- FF300R12KT4HOSA1
- 製造商:
- Infineon
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可享批量折扣
查看批量定價選項小計（1 托盤，共 10 件）*
TWD43,895.00
(不含稅)
TWD46,089.80
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2027年4月22日 發貨
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單位 | 每單位 | 每托盤* |
|---|---|---|
| 10 - 10 | TWD4,389.50 | TWD43,895.00 |
| 20 + | TWD4,301.60 | TWD43,016.00 |
* 參考價格
- RS庫存編號:
- 244-5822
- 製造零件編號:
- FF300R12KT4HOSA1
- 製造商:
- Infineon
規格
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法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | IGBT Module | |
| Maximum Continuous Collector Current Ic | 450A | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Number of Transistors | 2 | |
| Maximum Power Dissipation Pd | 1600W | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.15V | |
| Maximum Operating Temperature | 175°C | |
| Series | FF | |
| Width | 61.4mm | |
| Standards/Approvals | No | |
| Length | 106.4mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type IGBT Module | ||
Maximum Continuous Collector Current Ic 450A | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Number of Transistors 2 | ||
Maximum Power Dissipation Pd 1600W | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.15V | ||
Maximum Operating Temperature 175°C | ||
Series FF | ||
Width 61.4mm | ||
Standards/Approvals No | ||
Length 106.4mm | ||
Automotive Standard No | ||
Infineon Series FF IGBT Module, 1200V Collector-Emitter Voltage, 450A Collector Current - FF300R12KT4HOSA1
This IGBT module is a power semiconductor device designed to switch and control high-voltage DC circuits in industrial power systems. It combines two transistors in a single package to handle high current loads and operates across a wide temperature range suitable for demanding thermal environments.
Features and Benefits:
• 1200V blocking capability for high-voltage switching applications
• 450A continuous collector current to support heavy current demands
• 1600W maximum power dissipation for sustained high-power operation
• 2.15V low Vce(sat) for reduced conduction losses
• 20V maximum gate-emitter rating to define safe drive limits
• Operates up to 175°C for elevated-temperature installations
• 450A continuous collector current to support heavy current demands
• 1600W maximum power dissipation for sustained high-power operation
• 2.15V low Vce(sat) for reduced conduction losses
• 20V maximum gate-emitter rating to define safe drive limits
• Operates up to 175°C for elevated-temperature installations
Applications
• Suitable for high-voltage motor drive systems
• Ideal for industrial inverters requiring high current
• Can be used for renewable-energy converter stages
• Used with power supplies needing Compact dual transistors
• Applicable in traction or utility power-electronics environments
• Ideal for industrial inverters requiring high current
• Can be used for renewable-energy converter stages
• Used with power supplies needing Compact dual transistors
• Applicable in traction or utility power-electronics environments
What transistor configuration does it provide?
It contains two matched transistors in a single module allowing synchronous or complementary switching arrangements.
What environmental extremes can it withstand?
It is rated to function down to -40°C and up to 175°C for operation across wide temperature ranges.
How does the gate-emitter limitation affect drive circuitry?
The 20V gate-emitter limit defines the maximum allowable gate-drive voltage and determines required gate-drive protection and level-shifting design.
What electrical stress limits should designers observe?
Designers must account for a 1200V collector-emitter blocking limit and a 1600W package dissipation ceiling when planning thermal management.
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