Infineon FF300R12KT4HOSA1 IGBT Module, 450 A 1200 V

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小計(1 托盤,共 10 件)*

TWD35,123.00

(不含稅)

TWD36,879.20

(含稅)

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每單位
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10 - 10TWD3,512.30TWD35,123.00
20 +TWD3,442.00TWD34,420.00

* 參考價格

RS庫存編號:
244-5822
製造零件編號:
FF300R12KT4HOSA1
製造商:
Infineon
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品牌

Infineon

Maximum Continuous Collector Current

450 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Number of Transistors

2

Maximum Power Dissipation

1.6 kW

The infineon IGBT module the maximum rated collector emitter voltage is 1200 V and toatal power dissipation is 1600 W, maximum gate threshold voltage is 6.4 V.

Internal isolation basic insulation (class 1, IEC 61140)
Gate-emitter peak voltage + /- 20 V
Collector-emitter saturation voltage 2.15 V
Gate-emitter leakage current 400 nA

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.


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