IXYS, Type N-Channel IGBT Module, 135 A 1200 V, 7-Pin Y4-M5, Surface
- RS庫存編號:
- 168-4474
- 製造零件編號:
- MII100-12A3
- 製造商:
- IXYS
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 盒，共 6 件）*
TWD19,435.80
(不含稅)
TWD20,407.56
(含稅)
庫存資訊目前無法存取 - 請稍後再回來查看
單位 | 每單位 | 每盒* |
|---|---|---|
| 6 - 24 | TWD3,239.30 | TWD19,435.80 |
| 30 + | TWD2,915.50 | TWD17,493.00 |
* 參考價格
- RS庫存編號:
- 168-4474
- 製造零件編號:
- MII100-12A3
- 製造商:
- IXYS
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | IXYS | |
| Maximum Continuous Collector Current Ic | 135A | |
| Product Type | IGBT Module | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 560W | |
| Package Type | Y4-M5 | |
| Mount Type | Surface | |
| Channel Type | Type N | |
| Pin Count | 7 | |
| Switching Speed | 30kHz | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.7V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Series | NPT | |
| Standards/Approvals | No | |
| Length | 94mm | |
| Height | 30mm | |
| Width | 34 mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 IXYS | ||
Maximum Continuous Collector Current Ic 135A | ||
Product Type IGBT Module | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 560W | ||
Package Type Y4-M5 | ||
Mount Type Surface | ||
Channel Type Type N | ||
Pin Count 7 | ||
Switching Speed 30kHz | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.7V | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 150°C | ||
Series NPT | ||
Standards/Approvals No | ||
Length 94mm | ||
Height 30mm | ||
Width 34 mm | ||
Automotive Standard No | ||
IGBT Modules, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.