Infineon FS1150R08A8P3LMCHPSA1, Type N-Channel Half Bridge IGBT, 600 A 750 V, Screw

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TWD38,481.00

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TWD40,405.05

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RS庫存編號:
349-029
製造零件編號:
FS1150R08A8P3LMCHPSA1
製造商:
Infineon
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品牌

Infineon

Maximum Continuous Collector Current Ic

600A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

750V

Maximum Power Dissipation Pd

1kW

Number of Transistors

6

Configuration

Half Bridge

Mount Type

Screw

Channel Type

Type N

Maximum Collector Emitter Saturation Voltage VceSAT

1.22V

Minimum Operating Temperature

-40°C

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Operating Temperature

185°C

Standards/Approvals

RoHS, UL 94 V0

Automotive Standard

AQG 324

COO (Country of Origin):
DE
The Infineon HybridPACK Drive G2 module is a very compact six pack power module with enhanced package optimized for hybrid and electric vehicles. The power module implements Infineon’s next generation chip technology EDT3 750V, optimized for electric drive train applications, from mid to high range automotive power classes.

Low inductive design

4.2 kV DC 1 second insulation

High creepage and clearance distances

Direct cooled PinFin base plate

PCB and cooler assembly guidelines

PressFIT contact technology

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