STMicroelectronics STGHU30M65DF2AG Dual Gate IGBT, 84 A 650 V, 7-Pin HU3PAK, Surface Mount

查看所有IGBTs
可享批量折扣

小計（1 件）*

TWD120.00

(不含稅)

TWD126.00

(含稅)

Add to Basket
選擇或輸入數量
有庫存
  • 595 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位
每單位
1 - 9TWD120.00
10 - 99TWD108.00
100 +TWD99.00

* 參考價格

包裝方式：
RS庫存編號:
285-638
製造零件編號:
STGHU30M65DF2AG
製造商:
STMicroelectronics
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

STMicroelectronics

Maximum Continuous Collector Current

84 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

441 W

Number of Transistors

1

Configuration

Dual Gate

Package Type

HU3PAK

Mounting Type

Surface Mount

Pin Count

7

This STMicroelectronics device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation.

Maximum junction temperature TJ = 175 °C
6 μs of minimum short circuit withstand time
Tight parameter distribution
Safer paralleling
Low thermal resistance
Soft and very fast recovery antiparallel diode
Excellent switching performance thanks to the extra driving kelvin pin

相關連結