STMicroelectronics STGHU30M65DF2AG Dual Gate IGBT, 84 A 650 V, 7-Pin HU3PAK, Surface Mount

RS庫存編號:: 285-637
製造零件編號:: STGHU30M65DF2AG
製造商:: STMicroelectronics

STMicroelectronics STGHU30M65DF2AG Dual Gate IGBT, 84 A 650 V, 7-Pin HU3PAK, Surface Mount

小計（1 卷，共 600 件）*

TWD59,160.00

(不含稅)

TWD62,118.00

訂單超過 $1,300.00 免費送貨

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從 2026年6月01日發貨

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單位	每單位	每卷*
600 +	TWD98.60	TWD59,160.00

* 參考價格

RS庫存編號:: 285-637
製造零件編號:: STGHU30M65DF2AG
製造商:: STMicroelectronics

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選取全部	屬性	值
	品牌	STMicroelectronics
	Maximum Continuous Collector Current	84 A
	Maximum Collector Emitter Voltage	650 V
	Maximum Gate Emitter Voltage	±20V
	Number of Transistors	1
	Maximum Power Dissipation	441 W
	Configuration	Dual Gate
	Package Type	HU3PAK
	Mounting Type	Surface Mount
	Pin Count	7

	選取全部
	品牌 STMicroelectronics
	Maximum Continuous Collector Current 84 A
	Maximum Collector Emitter Voltage 650 V
	Maximum Gate Emitter Voltage ±20V
	Number of Transistors 1
	Maximum Power Dissipation 441 W
	Configuration Dual Gate
	Package Type HU3PAK
	Mounting Type Surface Mount
	Pin Count 7

Datasheet - STGHU30M65DF2AG

This STMicroelectronics device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation.

Maximum junction temperature TJ = 175 °C
6 μs of minimum short circuit withstand time
Tight parameter distribution
Safer paralleling
Low thermal resistance
Soft and very fast recovery antiparallel diode
Excellent switching performance thanks to the extra driving kelvin pin

STMicroelectronics STGHU30M65DF2AG Dual Gate IGBT, 84 A 650 V, 7-Pin HU3PAK, Surface Mount

訂單超過 $1,300.00 免費送貨

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