規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	STMicroelectronics
	Maximum Continuous Collector Current Ic	40A
	Product Type	Trench Gate Field Stop IGBT
	Maximum Collector Emitter Voltage Vceo	650V
	Maximum Power Dissipation Pd	168W
	Package Type	TO
	Mount Type	Through Hole
	Channel Type	Type N
	Pin Count	3
	Maximum Gate Emitter Voltage VGEO	±20 V
	Maximum Collector Emitter Saturation Voltage VceSAT	2V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Series	HB
	Standards/Approvals	RoHS
	Automotive Standard	No

	選取全部
	品牌 STMicroelectronics
	Maximum Continuous Collector Current Ic 40A
	Product Type Trench Gate Field Stop IGBT
	Maximum Collector Emitter Voltage Vceo 650V
	Maximum Power Dissipation Pd 168W
	Package Type TO
	Mount Type Through Hole
	Channel Type Type N
	Pin Count 3
	Maximum Gate Emitter Voltage VGEO ±20 V
	Maximum Collector Emitter Saturation Voltage VceSAT 2V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Series HB
	Standards/Approvals RoHS
	Automotive Standard No

COO (Country of Origin):: KR

These devices are IGBTs developed using an advanced proprietary trench gate and field-stop structure. The device is part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Maximum junction temperature: TJ= 175 °C

High speed switching series

Minimized tail current

VCE(sat)= 1.55 V (typ.) @ IC= 20 A

Tight parameters distribution

Safe paralleling

Low thermal resistance

Lead free package

STMicroelectronics, Type N-Channel Trench Gate Field Stop IGBT, 40 A 650 V, 3-Pin TO, Through Hole

相關連結