STMicroelectronics STGWT20H65FB IGBT, 40 A 650 V, 3-Pin TO, Through Hole

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RS庫存編號:
192-4655
製造零件編號:
STGWT20H65FB
製造商:
STMicroelectronics
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STMicroelectronics

Maximum Continuous Collector Current

40 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Number of Transistors

1

Maximum Power Dissipation

168 W

Package Type

TO

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

15.8 x 5 x 20.1mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+175 °C

COO (Country of Origin):
KR
These devices are IGBTs developed using an advanced proprietary trench gate and field-stop structure. The device is part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Maximum junction temperature: TJ= 175 °C
High speed switching series
Minimized tail current
VCE(sat)= 1.55 V (typ.) @ IC= 20 A
Tight parameters distribution
Safe paralleling
Low thermal resistance
Lead free package

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.


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