製造零件編號

STMicroelectronics STGD5H60DF, Type N-Channel Trench Gate Field Stop IGBT, 10 A 600 V, 3-Pin TO-252, Surface

RS庫存編號:: 906-2798
製造零件編號:: STGD5H60DF
製造商:: STMicroelectronics

STMicroelectronics STGD5H60DF, Type N-Channel Trench Gate Field Stop IGBT, 10 A 600 V, 3-Pin TO-252, Surface

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 包，共 10 件）*

TWD276.00

(不含稅)

TWD289.80

訂單超過 $1,300.00 免費送貨

暫時缺貨

從 2026年7月06日發貨

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單位	每單位	每包*
10 - 620	TWD27.60	TWD276.00
630 - 1240	TWD26.80	TWD268.00
1250 +	TWD26.40	TWD264.00

* 參考價格

RS庫存編號:: 906-2798
製造零件編號:: STGD5H60DF
製造商:: STMicroelectronics

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	STMicroelectronics
	Maximum Continuous Collector Current Ic	10A
	Product Type	Trench Gate Field Stop IGBT
	Maximum Collector Emitter Voltage Vceo	600V
	Maximum Power Dissipation Pd	88W
	Package Type	TO-252
	Mount Type	Surface
	Channel Type	Type N
	Pin Count	3
	Maximum Gate Emitter Voltage VGEO	±20 V
	Maximum Collector Emitter Saturation Voltage VceSAT	1.95V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Length	6.6mm
	Standards/Approvals	RoHS
	Series	H
	Width	6.2 mm
	Height	2.4mm
	Energy Rating	221mJ
	Automotive Standard	No

	選取全部
	品牌 STMicroelectronics
	Maximum Continuous Collector Current Ic 10A
	Product Type Trench Gate Field Stop IGBT
	Maximum Collector Emitter Voltage Vceo 600V
	Maximum Power Dissipation Pd 88W
	Package Type TO-252
	Mount Type Surface
	Channel Type Type N
	Pin Count 3
	Maximum Gate Emitter Voltage VGEO ±20 V
	Maximum Collector Emitter Saturation Voltage VceSAT 1.95V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Length 6.6mm
	Standards/Approvals RoHS
	Series H
	Width 6.2 mm
	Height 2.4mm
	Energy Rating 221mJ
	Automotive Standard No

COO (Country of Origin):: CN

IGBT Discretes, STMicroelectronics

IGBT Discretes & Modules, STMicroelectronics

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

STMicroelectronics STGD5H60DF, Type N-Channel Trench Gate Field Stop IGBT, 10 A 600 V, 3-Pin TO-252, Surface

訂單超過 $1,300.00 免費送貨

IGBT Discretes, STMicroelectronics

IGBT Discretes & Modules, STMicroelectronics

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