STMicroelectronics STGD5H60DF, Type N-Channel Trench Gate Field Stop IGBT, 10 A 600 V, 3-Pin TO-252, Surface

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包裝方式：
RS庫存編號:
906-2798
製造零件編號:
STGD5H60DF
製造商:
STMicroelectronics
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品牌

STMicroelectronics

Product Type

Trench Gate Field Stop IGBT

Maximum Continuous Collector Current Ic

10A

Maximum Collector Emitter Voltage Vceo

600V

Maximum Power Dissipation Pd

88W

Package Type

TO-252

Mount Type

Surface

Channel Type

Type N

Pin Count

3

Maximum Collector Emitter Saturation Voltage VceSAT

1.95V

Maximum Gate Emitter Voltage VGEO

±20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Length

6.6mm

Standards/Approvals

RoHS

Series

H

Width

6.2 mm

Height

2.4mm

Energy Rating

221mJ

Automotive Standard

No

COO (Country of Origin):
CN

IGBT Discretes, STMicroelectronics


IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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