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選取全部	屬性	值
	品牌	STMicroelectronics
	Product Type	Trench Gate Field Stop IGBT
	Maximum Continuous Collector Current Ic	40A
	Maximum Collector Emitter Voltage Vceo	650V
	Maximum Power Dissipation Pd	168W
	Package Type	TO
	Mount Type	Through Hole
	Channel Type	Type N
	Pin Count	3
	Minimum Operating Temperature	-55°C
	Maximum Gate Emitter Voltage VGEO	±20 V
	Maximum Collector Emitter Saturation Voltage VceSAT	2V
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Series	HB
	Automotive Standard	No

	選取全部
	品牌 STMicroelectronics
	Product Type Trench Gate Field Stop IGBT
	Maximum Continuous Collector Current Ic 40A
	Maximum Collector Emitter Voltage Vceo 650V
	Maximum Power Dissipation Pd 168W
	Package Type TO
	Mount Type Through Hole
	Channel Type Type N
	Pin Count 3
	Minimum Operating Temperature -55°C
	Maximum Gate Emitter Voltage VGEO ±20 V
	Maximum Collector Emitter Saturation Voltage VceSAT 2V
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Series HB
	Automotive Standard No

COO (Country of Origin):: KR

These devices are IGBTs developed using an advanced proprietary trench gate and field-stop structure. The device is part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Maximum junction temperature: TJ= 175 °C

High speed switching series

Minimized tail current

VCE(sat)= 1.55 V (typ.) @ IC= 20 A

Tight parameters distribution

Safe paralleling

Low thermal resistance

Lead free package

STMicroelectronics STGWT20H65FB, Type N-Channel Trench Gate Field Stop IGBT, 40 A 650 V, 3-Pin TO, Through Hole

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