STMicroelectronics STGWA50M65DF2AG Single IGBT, 119 A 650 V, 3-Pin TO-247, Through Hole
- RS庫存編號:
- 215-008
- 製造零件編號:
- STGWA50M65DF2AG
- 製造商:
- STMicroelectronics
小計(1 管,共 30 件)*
TWD3,930.00
(不含稅)
TWD4,126.50
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年6月01日 發貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 30 + | TWD131.00 | TWD3,930.00 |
* 參考價格
- RS庫存編號:
- 215-008
- 製造零件編號:
- STGWA50M65DF2AG
- 製造商:
- STMicroelectronics
規格
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Maximum Continuous Collector Current | 119 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 576 W | |
| Number of Transistors | 1 | |
| Package Type | TO-247 | |
| Configuration | Single | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Maximum Continuous Collector Current 119 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 576 W | ||
Number of Transistors 1 | ||
Package Type TO-247 | ||
Configuration Single | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
- COO (Country of Origin):
- CN
The STMicroelectronics IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation.
Minimized tail current
Tight parameter distribution
Safer paralleling
Tight parameter distribution
Safer paralleling
相關連結
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