STMicroelectronics GWA40MS120DF4AG Single IGBT, 80 A 1200 V, 3-Pin TO-247, Through Hole
- RS庫存編號:
- 215-030
- 製造零件編號:
- GWA40MS120DF4AG
- 製造商:
- STMicroelectronics
N
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TWD208.00
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TWD218.40
(含稅)
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單位 | 每單位 |
|---|---|
| 1 + | TWD208.00 |
* 參考價格
- RS庫存編號:
- 215-030
- 製造零件編號:
- GWA40MS120DF4AG
- 製造商:
- STMicroelectronics
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Maximum Continuous Collector Current | 80 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±30V | |
| Number of Transistors | 1 | |
| Maximum Power Dissipation | 536 W | |
| Configuration | Single | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Maximum Continuous Collector Current 80 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±30V | ||
Number of Transistors 1 | ||
Maximum Power Dissipation 536 W | ||
Configuration Single | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
- COO (Country of Origin):
- CN
The STMicroelectronics IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the MS series IGBTs, which represent an evolution of low-loss M series specifically designed for inverter system thanks to the outstanding short-circuit capability at high bus voltage value. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
Minimized tail current
Tight parameter distribution
Safer paralleling
Tight parameter distribution
Safer paralleling
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