STMicroelectronics STGB3NC120HDT4, Type N-Channel IGBT, 14 A 1200 V, 3-Pin TO-263, Surface
- RS庫存編號:
- 151-940
- 製造零件編號:
- STGB3NC120HDT4
- 製造商:
- STMicroelectronics
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小計（1 組，共 5 件）*
TWD352.00
(不含稅)
TWD369.60
(含稅)
訂單超過 $1,300.00 免費送貨
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單位 | 每單位 | 每膠帶* |
|---|---|---|
| 5 - 45 | TWD70.40 | TWD352.00 |
| 50 - 95 | TWD67.00 | TWD335.00 |
| 100 - 495 | TWD62.00 | TWD310.00 |
| 500 + | TWD57.00 | TWD285.00 |
* 參考價格
- RS庫存編號:
- 151-940
- 製造零件編號:
- STGB3NC120HDT4
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
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產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Maximum Continuous Collector Current Ic | 14A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 75W | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 15ns | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.8V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1mm | |
| Standards/Approvals | No | |
| Width | 4.4 mm | |
| Length | 16mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Maximum Continuous Collector Current Ic 14A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 75W | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 15ns | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.8V | ||
Maximum Operating Temperature 150°C | ||
Height 1mm | ||
Standards/Approvals No | ||
Width 4.4 mm | ||
Length 16mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics IGBT shows an excellent trade off between low conduction losses and fast switching performance. It is designed in Power MESH technology combined with high voltage ultrafast diode.
High voltage capability
High speed
Very soft ultrafast recovery anti parallel diode
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