製造零件編號

STMicroelectronics STGYA75H120DF2, Type N-Channel IGBT, 150 A 1200 V, 3-Pin Max247, Through Hole

RS庫存編號:: 234-8892
製造零件編號:: STGYA75H120DF2
製造商:: STMicroelectronics

STMicroelectronics STGYA75H120DF2, Type N-Channel IGBT, 150 A 1200 V, 3-Pin Max247, Through Hole

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可享批量折扣

小計（1 管，共 30 件）*

TWD9,162.00

(不含稅)

TWD9,620.10

訂單超過 $1,300.00 免費送貨

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單位	每單位	每管*
30 - 120	TWD305.40	TWD9,162.00
150 - 270	TWD296.20	TWD8,886.00
300 +	TWD287.30	TWD8,619.00

* 參考價格

RS庫存編號:: 234-8892
製造零件編號:: STGYA75H120DF2
製造商:: STMicroelectronics

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	STMicroelectronics
	Product Type	IGBT
	Maximum Continuous Collector Current Ic	150A
	Maximum Collector Emitter Voltage Vceo	1200V
	Maximum Power Dissipation Pd	750W
	Package Type	Max247
	Mount Type	Through Hole
	Channel Type	Type N
	Pin Count	3
	Switching Speed	1MHz
	Maximum Gate Emitter Voltage VGEO	20 V
	Maximum Collector Emitter Saturation Voltage VceSAT	2.6V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Automotive Standard	No

	選取全部
	品牌 STMicroelectronics
	Product Type IGBT
	Maximum Continuous Collector Current Ic 150A
	Maximum Collector Emitter Voltage Vceo 1200V
	Maximum Power Dissipation Pd 750W
	Package Type Max247
	Mount Type Through Hole
	Channel Type Type N
	Pin Count 3
	Switching Speed 1MHz
	Maximum Gate Emitter Voltage VGEO 20 V
	Maximum Collector Emitter Saturation Voltage VceSAT 2.6V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Automotive Standard No

Datasheet - STGYA75H120DF2

The STMicroelectronics IGBT developed using an Advanced proprietary trench gate field stop structure. This device is part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Moreover, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Maximum junction temperature TJ = 175 °C

5 μs of short-circuit withstand time

VCE(sat) = 2.1 V (typ.) @ IC = 75 A

Tight parameter distribution

Positive VCE(sat) temperature coefficient

Low thermal resistance

Very fast recovery antiparallel diode

STMicroelectronics STGYA75H120DF2, Type N-Channel IGBT, 150 A 1200 V, 3-Pin Max247, Through Hole

訂單超過 $1,300.00 免費送貨

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