Infineon BFQ19SH6327XTSA1 RF Bipolar Transistor, 120 mA NPN, 20 V, 3-Pin SOT-89
- RS庫存編號:
- 260-5067
- 製造零件編號:
- BFQ19SH6327XTSA1
- 製造商:
- Infineon
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可享批量折扣
查看批量定價選項小計（1 包，共 10 件）*
TWD146.00
(不含稅)
TWD153.30
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2027年1月08日 發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 40 | TWD14.60 | TWD146.00 |
| 50 - 90 | TWD13.50 | TWD135.00 |
| 100 - 240 | TWD11.20 | TWD112.00 |
| 250 - 490 | TWD11.00 | TWD110.00 |
| 500 + | TWD10.70 | TWD107.00 |
* 參考價格
- RS庫存編號:
- 260-5067
- 製造零件編號:
- BFQ19SH6327XTSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 120mA | |
| Maximum Collector Emitter Voltage Vceo | 20V | |
| Package Type | SOT-89 | |
| Mount Type | Surface | |
| Transistor Configuration | NPN | |
| Maximum Collector Base Voltage VCBO | 20V | |
| Maximum Power Dissipation Pd | 1W | |
| Minimum Operating Temperature | -65°C | |
| Maximum Emitter Base Voltage VEBO | 3V | |
| Transistor Polarity | NPN | |
| Minimum DC Current Gain hFE | 70 | |
| Maximum Transition Frequency ft | 5.5GHz | |
| Pin Count | 3 | |
| Maximum Operating Temperature | 150°C | |
| Series | BFQ | |
| Length | 4mm | |
| Width | 4.5mm | |
| Height | 1.5mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 120mA | ||
Maximum Collector Emitter Voltage Vceo 20V | ||
Package Type SOT-89 | ||
Mount Type Surface | ||
Transistor Configuration NPN | ||
Maximum Collector Base Voltage VCBO 20V | ||
Maximum Power Dissipation Pd 1W | ||
Minimum Operating Temperature -65°C | ||
Maximum Emitter Base Voltage VEBO 3V | ||
Transistor Polarity NPN | ||
Minimum DC Current Gain hFE 70 | ||
Maximum Transition Frequency ft 5.5GHz | ||
Pin Count 3 | ||
Maximum Operating Temperature 150°C | ||
Series BFQ | ||
Length 4mm | ||
Width 4.5mm | ||
Height 1.5mm | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon silicon bipolar RF transistor are suitable for low noise, low distortion broadband amplifiers in antenna and telecommunications systems.
Pb free package
For low noise, low distortion broadband amplifiers in antenna and telecommunications systems
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