Infineon BFQ19SH6327XTSA1 RF Bipolar Transistor, 120 mA NPN, 20 V, 3-Pin SOT-89
- RS庫存編號:
- 260-5066
- 製造零件編號:
- BFQ19SH6327XTSA1
- 製造商:
- Infineon
可享批量折扣
查看批量定價選項小計（1000 件, 每卷1000個）*
TWD9,700.00
(不含稅)
TWD10,180.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 4,000 件從 2026年12月03日 起裝運發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 1000 - 1000 | TWD9.70 | TWD9,700.00 |
| 2000 - 3000 | TWD9.40 | TWD9,400.00 |
| 4000 + | TWD9.20 | TWD9,200.00 |
* 參考價格
- RS庫存編號:
- 260-5066
- 製造零件編號:
- BFQ19SH6327XTSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 120mA | |
| Maximum Collector Emitter Voltage Vceo | 20V | |
| Package Type | SOT-89 | |
| Mount Type | Surface | |
| Transistor Configuration | NPN | |
| Maximum Collector Base Voltage VCBO | 20V | |
| Minimum Operating Temperature | -65°C | |
| Transistor Polarity | NPN | |
| Maximum Transition Frequency ft | 5.5GHz | |
| Maximum Power Dissipation Pd | 1W | |
| Minimum DC Current Gain hFE | 70 | |
| Maximum Emitter Base Voltage VEBO | 3V | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 3 | |
| Height | 1.5mm | |
| Series | BFQ | |
| Width | 4.5mm | |
| Standards/Approvals | RoHS | |
| Length | 4mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 120mA | ||
Maximum Collector Emitter Voltage Vceo 20V | ||
Package Type SOT-89 | ||
Mount Type Surface | ||
Transistor Configuration NPN | ||
Maximum Collector Base Voltage VCBO 20V | ||
Minimum Operating Temperature -65°C | ||
Transistor Polarity NPN | ||
Maximum Transition Frequency ft 5.5GHz | ||
Maximum Power Dissipation Pd 1W | ||
Minimum DC Current Gain hFE 70 | ||
Maximum Emitter Base Voltage VEBO 3V | ||
Maximum Operating Temperature 150°C | ||
Pin Count 3 | ||
Height 1.5mm | ||
Series BFQ | ||
Width 4.5mm | ||
Standards/Approvals RoHS | ||
Length 4mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon silicon bipolar RF transistor are suitable for low noise, low distortion broadband amplifiers in antenna and telecommunications systems.
Pb free package
For low noise, low distortion broadband amplifiers in antenna and telecommunications systems
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