Nexperia Transistor, 4 A NPN, 80 V, 4-Pin UPAK
- RS庫存編號:
- 166-0256
- 製造零件編號:
- PBSS4480X,135
- 製造商:
- Nexperia
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可享批量折扣
查看批量定價選項小計（1 卷，共 4000 件）*
TWD30,800.00
(不含稅)
TWD32,320.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2027年3月15日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 4000 - 16000 | TWD7.70 | TWD30,800.00 |
| 20000 + | TWD7.50 | TWD30,000.00 |
* 參考價格
- RS庫存編號:
- 166-0256
- 製造零件編號:
- PBSS4480X,135
- 製造商:
- Nexperia
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Nexperia | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | 4A | |
| Maximum Collector Emitter Voltage Vceo | 80V | |
| Package Type | UPAK | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 80V | |
| Maximum Transition Frequency ft | 150MHz | |
| Minimum DC Current Gain hFE | 80 | |
| Maximum Power Dissipation Pd | 2.5W | |
| Transistor Polarity | NPN | |
| Maximum Emitter Base Voltage VEBO | 5V | |
| Minimum Operating Temperature | -65°C | |
| Pin Count | 4 | |
| Maximum Operating Temperature | 150°C | |
| Series | PBSS4480X | |
| Width | 2.5mm | |
| Length | 4.6mm | |
| Standards/Approvals | RoHS | |
| Height | 1.5mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Nexperia | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc 4A | ||
Maximum Collector Emitter Voltage Vceo 80V | ||
Package Type UPAK | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 80V | ||
Maximum Transition Frequency ft 150MHz | ||
Minimum DC Current Gain hFE 80 | ||
Maximum Power Dissipation Pd 2.5W | ||
Transistor Polarity NPN | ||
Maximum Emitter Base Voltage VEBO 5V | ||
Minimum Operating Temperature -65°C | ||
Pin Count 4 | ||
Maximum Operating Temperature 150°C | ||
Series PBSS4480X | ||
Width 2.5mm | ||
Length 4.6mm | ||
Standards/Approvals RoHS | ||
Height 1.5mm | ||
Automotive Standard AEC-Q101 | ||
Low Saturation Voltage NPN Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in Compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.