Nexperia Transistor, 2 A NPN, 50 V, 4-Pin UPAK
- RS庫存編號:
- 166-0477
- 製造零件編號:
- PBSS4250X,115
- 製造商:
- Nexperia
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可享批量折扣
查看批量定價選項小計（1 卷，共 1000 件）*
TWD3,900.00
(不含稅)
TWD4,100.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2027年3月08日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 1000 - 1000 | TWD3.90 | TWD3,900.00 |
| 2000 + | TWD3.70 | TWD3,700.00 |
* 參考價格
- RS庫存編號:
- 166-0477
- 製造零件編號:
- PBSS4250X,115
- 製造商:
- Nexperia
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Nexperia | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | 2A | |
| Maximum Collector Emitter Voltage Vceo | 50V | |
| Package Type | UPAK | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 50V | |
| Maximum Emitter Base Voltage VEBO | 5V | |
| Transistor Polarity | NPN | |
| Maximum Transition Frequency ft | 100MHz | |
| Maximum Power Dissipation Pd | 1W | |
| Minimum Operating Temperature | -65°C | |
| Minimum DC Current Gain hFE | 150 | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 4 | |
| Length | 4.6mm | |
| Width | 4.25mm | |
| Series | PBSS4250X | |
| Height | 1.5mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Nexperia | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc 2A | ||
Maximum Collector Emitter Voltage Vceo 50V | ||
Package Type UPAK | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 50V | ||
Maximum Emitter Base Voltage VEBO 5V | ||
Transistor Polarity NPN | ||
Maximum Transition Frequency ft 100MHz | ||
Maximum Power Dissipation Pd 1W | ||
Minimum Operating Temperature -65°C | ||
Minimum DC Current Gain hFE 150 | ||
Maximum Operating Temperature 150°C | ||
Pin Count 4 | ||
Length 4.6mm | ||
Width 4.25mm | ||
Series PBSS4250X | ||
Height 1.5mm | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
Low Saturation Voltage NPN Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in Compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.