Nexperia PBSS5480X,135 Transistor, -4 A PNP, -80 V, 4-Pin UPAK
- RS庫存編號:
- 518-2006
- 製造零件編號:
- PBSS5480X,135
- 製造商:
- Nexperia
此圖片僅供參考，請參閲產品詳細資訊及規格
小計（1 包，共 10 件）*
TWD156.00
(不含稅)
TWD163.80
(含稅)
庫存資訊目前無法存取 - 請稍後再回來查看
單位 | 每單位 | 每包* |
|---|---|---|
| 10 + | TWD15.60 | TWD156.00 |
* 參考價格
- RS庫存編號:
- 518-2006
- 製造零件編號:
- PBSS5480X,135
- 製造商:
- Nexperia
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Nexperia | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | -4A | |
| Maximum Collector Emitter Voltage Vceo | -80V | |
| Package Type | UPAK | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 80V | |
| Transistor Polarity | PNP | |
| Maximum Transition Frequency ft | 125MHz | |
| Minimum Operating Temperature | -65°C | |
| Maximum Emitter Base Voltage VEBO | 5V | |
| Minimum DC Current Gain hFE | 80 | |
| Maximum Power Dissipation Pd | 2.5W | |
| Pin Count | 4 | |
| Maximum Operating Temperature | 150°C | |
| Series | PBSS5480X | |
| Standards/Approvals | RoHS | |
| Width | 2.5mm | |
| Length | 4.6mm | |
| Height | 1.5mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Nexperia | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc -4A | ||
Maximum Collector Emitter Voltage Vceo -80V | ||
Package Type UPAK | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 80V | ||
Transistor Polarity PNP | ||
Maximum Transition Frequency ft 125MHz | ||
Minimum Operating Temperature -65°C | ||
Maximum Emitter Base Voltage VEBO 5V | ||
Minimum DC Current Gain hFE 80 | ||
Maximum Power Dissipation Pd 2.5W | ||
Pin Count 4 | ||
Maximum Operating Temperature 150°C | ||
Series PBSS5480X | ||
Standards/Approvals RoHS | ||
Width 2.5mm | ||
Length 4.6mm | ||
Height 1.5mm | ||
Automotive Standard No | ||
Low Saturation Voltage PNP Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in Compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.