Infineon Silicon Junction, Single, 30 A, 2-Pin 1200 V TO-220 IDP30E120XKSA1
- RS庫存編號:
- 145-8584
- 製造零件編號:
- IDP30E120XKSA1
- 製造商:
- Infineon
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計(1 管,共 50 件)*
TWD2,890.00
(不含稅)
TWD3,034.50
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2027年5月24日 發貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 50 - 50 | TWD57.80 | TWD2,890.00 |
| 100 - 150 | TWD56.70 | TWD2,835.00 |
| 200 + | TWD55.50 | TWD2,775.00 |
* 參考價格
- RS庫存編號:
- 145-8584
- 製造零件編號:
- IDP30E120XKSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Maximum Forward Current If | 30A | |
| Diode Configuration | Single | |
| Product Type | Silicon Junction | |
| Mount Type | Through Hole | |
| Sub Type | Silicon Junction | |
| Package Type | TO-220 | |
| Pin Count | 2 | |
| Maximum Forward Voltage Vf | 2.15V | |
| Peak Reverse Recovery Time trr | 380ns | |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 138W | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 102A | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.5mm | |
| Standards/Approvals | No | |
| Length | 10.2mm | |
| Height | 15.95mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Maximum Forward Current If 30A | ||
Diode Configuration Single | ||
Product Type Silicon Junction | ||
Mount Type Through Hole | ||
Sub Type Silicon Junction | ||
Package Type TO-220 | ||
Pin Count 2 | ||
Maximum Forward Voltage Vf 2.15V | ||
Peak Reverse Recovery Time trr 380ns | ||
Maximum Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 138W | ||
Peak Non-Repetitive Forward Surge Current Ifsm 102A | ||
Maximum Operating Temperature 150°C | ||
Width 4.5mm | ||
Standards/Approvals No | ||
Length 10.2mm | ||
Height 15.95mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
Fast Switching Emitter Controlled Diodes, Infineon
The Infineon switching emitter controlled diodes are the Rapid 1 and the Rapid 2 families also the 600 V/1200 V Ultra-soft diodes. The diodes work in various applications from Telecom, UPS, welding, AC-DC and the Ultra-soft version works on motor drive applications up to 30 kHz.
Rapid 1 diode switches between 18kHz and 40kHz
1.35V temperature-stable forward voltage
Ideal for Power Factor Correction (PFC) topologies
The Rapid 2 diode switches between 40 kHz and 100 kHz
Low reverse recovery charge: forward voltage ratio for BiC performance
Low reverse recovery time
Low turn-on losses on the boost switch
Ultra-fast Diode 600 V/1200 V Emitter Controlled technology
Qualified according to JEDEC Standard
Good EMI behaviour
Low conduction losses
Easy paralleling
Diodes and Rectifiers, Infineon
相關連結
- Infineon Silicon Junction 30 A, 2-Pin 1200 V TO-220 IDP30E120XKSA1
- IXYS Silicon Junction 30 A, 2-Pin 1200 V TO-220
- IXYS Silicon Junction 30 A, 2-Pin 1200 V TO-220 DSEP29-12A
- IXYS Silicon Junction 12 A, 2-Pin 1200 V TO-220
- IXYS Silicon Junction 8 A, 2-Pin 1200 V TO-220
- IXYS Silicon Junction 12 A, 2-Pin 1200 V TO-220 DSEP12-12A
- IXYS Silicon Junction 12 A, 2-Pin 1200 V TO-220 DSEP12-12B
- IXYS Silicon Junction 8 A, 2-Pin 1200 V TO-220 DSEP8-12A
