Infineon Silicon Junction, Single, 30 A, 2-Pin 1200 V TO-220 IDP30E120XKSA1

此圖片僅供參考,請參閲產品詳細資訊及規格

可享批量折扣

小計(1 包,共 10 件)*

TWD588.00

(不含稅)

TWD617.40

(含稅)

Add to Basket
選擇或輸入數量
暫時缺貨
  • 2026年9月14日 發貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位
每單位
每包*
10 - 10TWD58.80TWD588.00
20 - 20TWD57.60TWD576.00
30 +TWD56.40TWD564.00

* 參考價格

包裝方式:
RS庫存編號:
110-7168
製造零件編號:
IDP30E120XKSA1
製造商:
Infineon
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

Infineon

Diode Configuration

Single

Maximum Forward Current If

30A

Product Type

Silicon Junction

Mount Type

Through Hole

Sub Type

Silicon Junction

Package Type

TO-220

Pin Count

2

Maximum Peak Reverse Repetitive Voltage Vrrm

1200V

Peak Non-Repetitive Forward Surge Current Ifsm

102A

Minimum Operating Temperature

-55°C

Peak Reverse Recovery Time trr

380ns

Maximum Power Dissipation Pd

138W

Maximum Forward Voltage Vf

2.15V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

10.2mm

Height

15.95mm

Automotive Standard

No

Fast Switching Emitter Controlled Diodes, Infineon


The Infineon switching emitter controlled diodes are the Rapid 1 and the Rapid 2 families also the 600 V/1200 V Ultra-soft diodes. The diodes work in various applications from Telecom, UPS, welding, AC-DC and the Ultra-soft version works on motor drive applications up to 30 kHz.

Rapid 1 diode switches between 18kHz and 40kHz

1.35V temperature-stable forward voltage

Ideal for Power Factor Correction (PFC) topologies

The Rapid 2 diode switches between 40 kHz and 100 kHz

Low reverse recovery charge: forward voltage ratio for BiC performance

Low reverse recovery time

Low turn-on losses on the boost switch

Ultra-fast Diode 600 V/1200 V Emitter Controlled technology

Qualified according to JEDEC Standard

Good EMI behaviour

Low conduction losses

Easy paralleling

Diodes and Rectifiers, Infineon


相關連結