可享批量折扣
小計（1 包，共 2 件）*
TWD139.00
(不含稅)
TWD145.96
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 2,336 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 8 | TWD69.50 | TWD139.00 |
| 10 - 18 | TWD68.50 | TWD137.00 |
| 20 - 48 | TWD67.50 | TWD135.00 |
| 50 - 98 | TWD66.00 | TWD132.00 |
| 100 + | TWD65.00 | TWD130.00 |
* 參考價格
- RS庫存編號:
- 273-7333
- 製造零件編號:
- CY62128EV30LL-45ZAXI
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | SRAM | |
| Memory Size | 1MB | |
| Organisation | 128k x 8 | |
| Number of Words | 128k | |
| Number of Bits per Word | 8 | |
| Minimum Supply Voltage | 0.3V | |
| Maximum Supply Voltage | 0.3V | |
| Mount Type | Surface | |
| Package Type | TSOP II | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 85°C | |
| Pin Count | 32 | |
| Standards/Approvals | RoHS | |
| Height | 8.2mm | |
| Length | 18.5mm | |
| Width | 1.05 mm | |
| Series | CY62128EV30 | |
| Supply Current | 16mA | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type SRAM | ||
Memory Size 1MB | ||
Organisation 128k x 8 | ||
Number of Words 128k | ||
Number of Bits per Word 8 | ||
Minimum Supply Voltage 0.3V | ||
Maximum Supply Voltage 0.3V | ||
Mount Type Surface | ||
Package Type TSOP II | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 85°C | ||
Pin Count 32 | ||
Standards/Approvals RoHS | ||
Height 8.2mm | ||
Length 18.5mm | ||
Width 1.05 mm | ||
Series CY62128EV30 | ||
Supply Current 16mA | ||
Automotive Standard No | ||
The Infineon Static RAM is a high performance CMOS static RAM module organized as 128K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing more battery life in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. Placing the device in standby mode reduces power consumption by more than 99 percent when deselected.
High speed
Ultra low active power
Easy memory expansion
CMOS for optimum speed and power
Automatic power down when deselected
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