可享批量折扣
小計（1 件）*
TWD155.00
(不含稅)
TWD162.75
(含稅)
訂單超過 $1,300.00 免費送貨
有限的庫存
- 加上 1 件從 2026年3月02日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 |
|---|---|
| 1 - 9 | TWD155.00 |
| 10 - 24 | TWD152.00 |
| 25 - 49 | TWD149.00 |
| 50 - 99 | TWD146.00 |
| 100 + | TWD142.00 |
* 參考價格
- RS庫存編號:
- 273-5438
- 製造零件編號:
- S70KL1282GABHV020
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | SRAM | |
| Memory Size | 128MB | |
| Number of Bits per Word | 16 | |
| Maximum Random Access Time | 35ns | |
| Maximum Clock Frequency | 200MHz | |
| Timing Type | DDR | |
| Minimum Supply Voltage | 1.8V | |
| Maximum Supply Voltage | 3V | |
| Minimum Operating Temperature | -40°C | |
| Package Type | FBGA-24 Ball | |
| Maximum Operating Temperature | 105°C | |
| Standards/Approvals | No | |
| Series | HYPERRAM | |
| Automotive Standard | AEC-Q100 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type SRAM | ||
Memory Size 128MB | ||
Number of Bits per Word 16 | ||
Maximum Random Access Time 35ns | ||
Maximum Clock Frequency 200MHz | ||
Timing Type DDR | ||
Minimum Supply Voltage 1.8V | ||
Maximum Supply Voltage 3V | ||
Minimum Operating Temperature -40°C | ||
Package Type FBGA-24 Ball | ||
Maximum Operating Temperature 105°C | ||
Standards/Approvals No | ||
Series HYPERRAM | ||
Automotive Standard AEC-Q100 | ||
The Infineon DRAM is a high speed CMOS self refresh DRAM, with HYPERBUS™ interface. The DRAM array uses dynamic cells that require periodic refresh. Refresh control logic within the device manages the refresh operations on the DRAM array when the memory is not being actively read or written by the HYPERBUS™ interface master. Since the host is not required to manage any refresh operations, the DRAM array appears to the host as though the memory uses static cells that retain data without refresh. Hence, the memory is more accurately described as pseudo static RAM.
HYPERBUS™ interface
200 MHz maximum clock rate
Configurable burst characteristics
Data throughput up to 400 MBps
Bidirectional read write data strobe
Optional DDR centre aligned read strobe