Renesas Electronics SRAM, 6116LA25SOGI- 16kB
- RS庫存編號:
- 262-8970
- 製造零件編號:
- 6116LA25SOGI
- 製造商:
- Renesas Electronics
可享批量折扣
小計（1 件）*
TWD218.00
(不含稅)
TWD228.90
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 208 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 |
|---|---|
| 1 - 9 | TWD218.00 |
| 10 - 24 | TWD199.00 |
| 25 - 49 | TWD196.00 |
| 50 - 99 | TWD194.00 |
| 100 + | TWD174.00 |
* 參考價格
- RS庫存編號:
- 262-8970
- 製造零件編號:
- 6116LA25SOGI
- 製造商:
- Renesas Electronics
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Renesas Electronics | |
| Memory Size | 16kB | |
| Organisation | 2K x 8 | |
| Maximum Random Access Time | 25ns | |
| 選取全部 | ||
|---|---|---|
品牌 Renesas Electronics | ||
Memory Size 16kB | ||
Organisation 2K x 8 | ||
Maximum Random Access Time 25ns | ||
- COO (Country of Origin):
- TW
The Renesas Electronics CMOS SRAM is organized as 2K x 8. The SRAM offers a reduced power standby mode. The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.
Low-power consumption
Battery backup operation 2V data retention voltage
Produced with advanced CMOS high-performance technology
CMOS process virtually eliminates alpha particle soft-error rates
Input and output directly TTL-compatible
No clocks or refresh required
相關連結
- Renesas Electronics SRAM, 6116LA25SOGI- 16kB
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