Renesas Electronics SRAM, 6116LA25SOGI- 16kB
- RS庫存編號:
- 262-8968
- 製造零件編號:
- 6116LA25SOGI
- 製造商:
- Renesas Electronics
小計(1 管,共 310 件)*
TWD54,157.00
(不含稅)
TWD56,866.40
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年6月15日 發貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 310 + | TWD174.70 | TWD54,157.00 |
* 參考價格
- RS庫存編號:
- 262-8968
- 製造零件編號:
- 6116LA25SOGI
- 製造商:
- Renesas Electronics
規格
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Renesas Electronics | |
| Memory Size | 16kB | |
| Organisation | 2K x 8 | |
| Maximum Random Access Time | 25ns | |
| 選取全部 | ||
|---|---|---|
品牌 Renesas Electronics | ||
Memory Size 16kB | ||
Organisation 2K x 8 | ||
Maximum Random Access Time 25ns | ||
- COO (Country of Origin):
- TW
The Renesas Electronics CMOS SRAM is organized as 2K x 8. The SRAM offers a reduced power standby mode. The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.
Low-power consumption
Battery backup operation 2V data retention voltage
Produced with advanced CMOS high-performance technology
CMOS process virtually eliminates alpha particle soft-error rates
Input and output directly TTL-compatible
No clocks or refresh required
相關連結
- Renesas Electronics SRAM, 6116LA25SOGI- 16kB
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- Renesas Electronics SRAM, 71024S20TYG8- 1Mbit
- Renesas Electronics SRAM, 71V416L10PHG- 4Mbit
- Renesas Electronics SRAM, 71V416S10PHGI- 4Mbit
- Renesas Electronics SRAM, 71V416L15PHGI- 4Mbit
- Renesas Electronics SRAM, 71V416S10PHG- 4Mbit
