Renesas Electronics SRAM Memory- 4 MB

RS庫存編號:: 254-4966
製造零件編號:: 71V416S12PHGI
製造商:: Renesas Electronics

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 托盤，共 135 件）*

TWD35,019.00

(不含稅)

TWD36,769.95

訂單超過 $1,300.00 免費送貨

暫時缺貨

從 2026年8月03日發貨

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單位	每單位	每托盤*
135 - 135	TWD259.40	TWD35,019.00
270 +	TWD254.20	TWD34,317.00

* 參考價格

RS庫存編號:: 254-4966
製造零件編號:: 71V416S12PHGI
製造商:: Renesas Electronics

規格

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產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Renesas Electronics
	Memory Size	4MB
	Product Type	SRAM Memory
	Organisation	256k x 16
	Number of Words	262144 Words
	Number of Bits per Word	16
	Maximum Random Access Time	12ns
	Address Bus Width	18bit
	Timing Type	Asynchronous
	Minimum Supply Voltage	3V
	Maximum Supply Voltage	3.6V
	Minimum Operating Temperature	-40°C
	Maximum Operating Temperature	85°C
	Pin Count	44
	Standards/Approvals	JEDECLVTTL-Compatible
	Series	71V416
	Height	9mm
	Length	9mm
	Supply Current	200mA
	Automotive Standard	No

	選取全部
	品牌 Renesas Electronics
	Memory Size 4MB
	Product Type SRAM Memory
	Organisation 256k x 16
	Number of Words 262144 Words
	Number of Bits per Word 16
	Maximum Random Access Time 12ns
	Address Bus Width 18bit
	Timing Type Asynchronous
	Minimum Supply Voltage 3V
	Maximum Supply Voltage 3.6V
	Minimum Operating Temperature -40°C
	Maximum Operating Temperature 85°C
	Pin Count 44
	Standards/Approvals JEDECLVTTL-Compatible
	Series 71V416
	Height 9mm
	Length 9mm
	Supply Current 200mA
	Automotive Standard No

Datasheet - 71V416S12PHGI

The Renesas Electronics asynchronous static RAM center pwr & gnd pinout 4,194,304-bit high-speed static RAM organized as 256K x 16. It is fabricated using high-performance, high-reliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for highspeed memory needs. It has an output enable pin which operates as fast as 5 ns, with address access times as fast as 10 ns. It is packaged in a 44-pin, 400 mil Plastic SOJ and a 44-pin, 400 mil TSOP Type II package and a 48 ball grid array, 9mm x 9mm package.

256K x 16 advanced high-speed CMOS static RAM

JEDEC center power / GND pinout for reduced noise.

One chip select plus one output enable pin

Bidirectional data inputs and outputs directly LVTTL-compatible

Low power consumption via chip deselect

Upper and lower byte Enable Pins

Single 3.3 V power supply

Available in 44-pin, 400 mil plastic SOJ package and a 44-pin, 400 mil TSOP Type II package and a 48 ball grid array, 9mm x 9mm package.

Green parts available, see ordering information

Renesas Electronics SRAM Memory- 4 MB

訂單超過 $1,300.00 免費送貨

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