Renesas Electronics SRAM Memory- 4 MB

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TWD35,019.00

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TWD36,769.95

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RS庫存編號:
254-4966
製造零件編號:
71V416S12PHGI
製造商:
Renesas Electronics
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品牌

Renesas Electronics

Memory Size

4MB

Product Type

SRAM Memory

Organisation

256k x 16

Number of Words

262144 Words

Number of Bits per Word

16

Maximum Random Access Time

12ns

Address Bus Width

18bit

Minimum Supply Voltage

3V

Timing Type

Asynchronous

Maximum Supply Voltage

3.6V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

85°C

Pin Count

44

Length

9mm

Standards/Approvals

JEDECLVTTL-Compatible

Height

9mm

Series

71V416

Supply Current

200mA

Automotive Standard

No

The Renesas Electronics asynchronous static RAM center pwr & gnd pinout 4,194,304-bit high-speed static RAM organized as 256K x 16. It is fabricated using high-performance, high-reliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for highspeed memory needs. It has an output enable pin which operates as fast as 5 ns, with address access times as fast as 10 ns. It is packaged in a 44-pin, 400 mil Plastic SOJ and a 44-pin, 400 mil TSOP Type II package and a 48 ball grid array, 9mm x 9mm package.

256K x 16 advanced high-speed CMOS static RAM

JEDEC center power / GND pinout for reduced noise.

One chip select plus one output enable pin

Bidirectional data inputs and outputs directly LVTTL-compatible

Low power consumption via chip deselect

Upper and lower byte Enable Pins

Single 3.3 V power supply

Available in 44-pin, 400 mil plastic SOJ package and a 44-pin, 400 mil TSOP Type II package and a 48 ball grid array, 9mm x 9mm package.

Green parts available, see ordering information

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