Renesas Electronics SRAM Memory, 71V016SA12PHGI- 1 MB
- RS庫存編號:
- 254-4963
- 製造零件編號:
- 71V016SA12PHGI
- 製造商:
- Renesas Electronics
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
小計(1 包,共 5 件)*
TWD486.00
(不含稅)
TWD510.30
(含稅)
庫存資訊目前無法存取 - 請稍後再回來查看
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 5 | TWD97.20 | TWD486.00 |
| 10 - 20 | TWD87.60 | TWD438.00 |
| 25 - 45 | TWD86.40 | TWD432.00 |
| 50 - 70 | TWD84.60 | TWD423.00 |
| 75 + | TWD82.80 | TWD414.00 |
* 參考價格
- RS庫存編號:
- 254-4963
- 製造零件編號:
- 71V016SA12PHGI
- 製造商:
- Renesas Electronics
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Renesas Electronics | |
| Memory Size | 1MB | |
| Product Type | SRAM Memory | |
| Organisation | 64k x 16 | |
| Number of Words | 65536 Words | |
| Number of Bits per Word | 16 | |
| Maximum Random Access Time | 12ns | |
| Address Bus Width | 16bit | |
| Timing Type | Asynchronous | |
| Minimum Supply Voltage | 3V | |
| Maximum Supply Voltage | 3.6V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 85°C | |
| Pin Count | 44 | |
| Standards/Approvals | JEDEC | |
| Series | 71V016SA | |
| Height | 7mm | |
| Length | 7mm | |
| Supply Current | 170mA | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Renesas Electronics | ||
Memory Size 1MB | ||
Product Type SRAM Memory | ||
Organisation 64k x 16 | ||
Number of Words 65536 Words | ||
Number of Bits per Word 16 | ||
Maximum Random Access Time 12ns | ||
Address Bus Width 16bit | ||
Timing Type Asynchronous | ||
Minimum Supply Voltage 3V | ||
Maximum Supply Voltage 3.6V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 85°C | ||
Pin Count 44 | ||
Standards/Approvals JEDEC | ||
Series 71V016SA | ||
Height 7mm | ||
Length 7mm | ||
Supply Current 170mA | ||
Automotive Standard No | ||
The Renesas Electronics asynchronous static RAM is 1,048,576-bit high-speed Static RAM organized as 64K x 16. It is fabricated using high-performance, high-reliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for high-speed memory needs. It has an output enable pin which operates as fast as 5 ns, with address access times as fast as 10ns. All bidirectional inputs and outputs of the this product are LVTTL compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation. It is packaged in a JEDEC standard 44-pin Plastic SOJ, a 44-pin TSOP Type II, and a 48-ball plastic 7 x 7 mm FBGA.
64K x 16 Advanced high-speed CMOS Static RAM
One Chip Select Plus one Output Enable pin
Low power consumption via chip deselect
Upper and Lower Byte Enable Pins
Single 3.3V power supply
Available in 44-pin Plastic SOJ, 44-pin TSOP, and 48-Ball Plastic FBGA packages
Industrial temperature range (–40°C to +85°C) is available for selected speeds
Green parts available, see ordering information
相關連結
- Renesas Electronics SRAM Memory- 1 MB
- Renesas Electronics SRAM Memory, 71V016SA10PHG- 1 MB
- Renesas Electronics SRAM Memory- 4 MB
- Renesas Electronics SRAM Memory, 71V416S12PHGI- 4 MB
- Renesas Electronics SRAM Memory- 2 MB
- Renesas Electronics SRAM Memory, RMLV1616AGSA-5S2#AA0- 2 MB
- Renesas Electronics SRAM- 1 MB
- Renesas Electronics SRAM, 71016S15PHGI- 1 MB
