Renesas Electronics SRAM, RMLV0416EGSB-4S2#AA1- 4 MB
- RS庫存編號:
- 250-0190
- 製造零件編號:
- RMLV0416EGSB-4S2#AA1
- 製造商:
- Renesas Electronics
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 件）*
TWD114.00
(不含稅)
TWD119.70
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年8月11日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 |
|---|---|
| 1 - 9 | TWD114.00 |
| 10 - 24 | TWD106.00 |
| 25 - 49 | TWD104.00 |
| 50 - 74 | TWD103.00 |
| 75 + | TWD101.00 |
* 參考價格
- RS庫存編號:
- 250-0190
- 製造零件編號:
- RMLV0416EGSB-4S2#AA1
- 製造商:
- Renesas Electronics
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Renesas Electronics | |
| Memory Size | 4MB | |
| Product Type | SRAM | |
| Organisation | 256k x 16 | |
| Number of Words | 256K | |
| Number of Bits per Word | 16 | |
| Maximum Random Access Time | 45ns | |
| Minimum Supply Voltage | 2.7V | |
| Maximum Supply Voltage | 3.6V | |
| Mount Type | Surface | |
| Package Type | TSOP | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 85°C | |
| Pin Count | 44 | |
| Width | 10.16 mm | |
| Standards/Approvals | RoHS | |
| Length | 18.41mm | |
| Series | RMLV0416E | |
| Height | 1mm | |
| Automotive Standard | No | |
| Supply Current | 10mA | |
| 選取全部 | ||
|---|---|---|
品牌 Renesas Electronics | ||
Memory Size 4MB | ||
Product Type SRAM | ||
Organisation 256k x 16 | ||
Number of Words 256K | ||
Number of Bits per Word 16 | ||
Maximum Random Access Time 45ns | ||
Minimum Supply Voltage 2.7V | ||
Maximum Supply Voltage 3.6V | ||
Mount Type Surface | ||
Package Type TSOP | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 85°C | ||
Pin Count 44 | ||
Width 10.16 mm | ||
Standards/Approvals RoHS | ||
Length 18.41mm | ||
Series RMLV0416E | ||
Height 1mm | ||
Automotive Standard No | ||
Supply Current 10mA | ||
4Mb Advanced LPSRAM (256-kword x 16-bit)
The RMLV0416E Series is a family of 4-Mbit static RAMs organized 262, 144-word x 16-bit, fabricated by Renesas’s high-performance Advanced LPSRAM technologies. The RMLV0416E Series has realized higher density, higher performance and low power consumption. The RMLV0416E Series offers low power standby power dissipation;therefore, it is suitable for battery backup systems. It is offered in 44-pin TSOP (II) or 48-ball fine pitch ball grid array.
Key features
相關連結
- Renesas Electronics SRAM- 4 MB
- Renesas Electronics SRAM, RMLV0816BGSB-4S2#AA0- 8 MB
- Renesas Electronics SRAM- 8 MB
- Renesas Electronics SRAM, 71V416L10PHG- 4 MB
- Renesas Electronics SRAM, 71V416L10PHGI- 4 MB
- Renesas Electronics SRAM, 71V416S15PHGI- 4 MB
- Renesas Electronics SRAM, 71V416S10PHGI- 4 MB
- Renesas Electronics SRAM Memory- 4 MB